We present a study of the electrical properties of insulating CeO 2 layers in combination with superconducting ͑Y/Dy͒ Ba 2 Cu 3 O 7Ϫ␦ ͑RBCO͒ films over ramps and in crossover structures. CeO 2 is frequently used as a buffer layer, or template layer for biepitaxial grain boundary junctions, but can also be used as an insulating layer in ramp-type junctions and other multilayer structures. Epitaxial thin films of CeO 2 were deposited by pulsed laser ablation using SrTiO 3 substrates. We characterized the insulating performance of CeO 2 thin films in terms of breakdown field E bd and the relative dielectric constant ⑀ r . For 80 nm thick CeO 2 at 77 K we found E bd ϭ1ϫ10 6 V/cm, using a 1 nA/100 m 2 breakdown criterion, which gives us a specific resistivity of у10 9 ⍀ cm up to breakdown. From capacitance measurements on planar RBCO/CeO 2 /RBCO structures we obtained for the dielectric constant: ⑀ r Ϸ15. The texture of CeO 2 in combination with RBCO on ramped surfaces, simulated by SrTiO 3 ͑STO͒ ͑103͒ substrates having their normal tilted by 18°away from the STO͓001͔ direction, has been studied by x-ray diffraction. © 1996 American Institute of Physics. ͓S0003-6951͑96͒02604-6͔High-quality heteroepitaxial multilayers of superconductors and insulators are required for high T c superconducting electronic devices, like ramp-type junctions and crossover structures in multiturn coils. For the use in highfrequency applications, an insulator having a low dielectric constant is preferred to reduce capacitive shunting. Materials often used as insulators in high T c superconducting devices are PrBa 2 Cu 3 O 7 ͑PBCO͒ 1 and SrTiO 3 ͑STO͒. 2 The use of PBCO has some disadvantages for its relatively low resistivity at 77 K and the anisotropic growth. The last property enhances the formation of granular films, and leaks are likely to occur at boundaries between a-and c-axis oriented grains. The main drawback of STO is its large dielectric constant ͓⑀ r Ϸ300 for thin films ͑Ref. 2͔͒, which severely limits its applicability in high-frequency devices. CeO 2 has been shown to be useful as a planar insulator. 3 It has a cubic crystal structure with lattice constant a 0 ϭ5.411 Å, and CeO 2 ͓100͔ is commensurate with YBCO͓110͔, corresponding to a relative rotation of 45°of the lattices. The very simple crystal structure, containing only one metal ion and oxygen, makes CeO 2 an easy material to grow by pulsed laser deposition, as no problems with the stoichiometry are to be expected. The use of CeO 2 in ramp-type junctions and crossover structures requires a nearly perfect heteroepitaxy with RBCO, both on top of flat surfaces and on artificially created ramped surfaces. The rotation of CeO 2 relative to RBCO, however, might induce grain boundaries or cracks when growing on a ramped surface. Reuvekamp et al. 4 showed that the preferential orientation of RBCO grown on YSZ is with the c-axis perpendicular to the local YSZ substrate surface. The difference in orientation in the upper YBCO layer on the ramp and on flat surfaces then caused cr...