Articles you may be interested inStress and texture development during sputtering of yttria, zirconia, and yttria stabilized zirconia films on Si substrates J. Appl. Phys. 112, 074910 (2012); 10.1063/1.4757924Ionic conductivity and thermal stability of magnetron-sputtered nanocrystalline yttria-stabilized zirconia Stress evolution as a function of substrate bias in rf magnetron sputtered yttria-stabilized zirconia films Effect of deposition interruption and substrate bias on the structure of sputter-deposited yttria-stabilized zirconia thin films Biaxially textured yttria-stabilized zirconia thin films were deposited at high rates (Ϸ3 m/h) using a two-target reactive magnetron sputtering geometry. The two small-area magnetron targets were mounted at 45°or 56°with respect to, and on opposite sides of, the substrate normal. The films showed strong ͑001͒ out-of-plane texture. Azimuthal x-ray diffraction scans confirmed strong in-plane texture with a best ͑111͒-peak full width at half maximum of 23°. The alignment was presumably due to directed impingement of sputtered atoms and/or energetic Ar neutrals reflected from the Zr-Y target surfaces. The film texture was not as strong when only one sputter source was used. Sputtering geometries useful for large-scale deposition of textured films are described.