1978
DOI: 10.1063/1.325074
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High conductivity ZnSe films

Abstract: Thin films of ZnSe deposited by vacuum evaporation have a high resistivity (≳5×108 Ω cm), even when donor impurities such as Ga or In and additional Zn are coevaporated. High-conductivity films of ZnSe were produced by annealing films, deposited with coevaporated Ga and Zn, in Zn vapor at 500 °C. Film resistivities in the range 0.5–40 Ω cm were obtained in this way, corresponding to degenerate n-type material with electron densities in the 1019-cm−3 range. Heterojunctions of n-ZnSe/p-CdTe and n-ZnSe/p-GaAs wer… Show more

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Cited by 24 publications
(7 citation statements)
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“…However, ZnO is one of the few metal oxides, which can be simultaneously optically transparent, and electrical conductor. Zinc oxide thin films have attracted much interest and find many applications such as in solar cells, energy windows, varistors, and gas sensors 1–4. This is due to their important properties characterized by high transparency, and conductivity, good thermal stability against the hydrogen plasma, nontoxic and easy fabrication 5,6…”
Section: Introductionmentioning
confidence: 99%
“…However, ZnO is one of the few metal oxides, which can be simultaneously optically transparent, and electrical conductor. Zinc oxide thin films have attracted much interest and find many applications such as in solar cells, energy windows, varistors, and gas sensors 1–4. This is due to their important properties characterized by high transparency, and conductivity, good thermal stability against the hydrogen plasma, nontoxic and easy fabrication 5,6…”
Section: Introductionmentioning
confidence: 99%
“…The reported electron affinity χ values for 6H‐SiC varies from 3.3 to 4.2 eV, [ 43–45 ] and for ZnO, it is 4.2–4.52 eV. [ 46–48 ] The valence band offset Δ E V = 1.38 V ( Figure 7 ) is obtained from Δ E V = Δ E C + Δ E g , where Δ E g = 0.4 eV is the energy bandgap difference between ZnO and 6H‐SiC. The large band offsets in type‐II HJ restrict the carrier transport across the junction at forward bias.…”
Section: Resultsmentioning
confidence: 99%
“…The reported electron affinity χ values for 6H-SiC varies from 3.3 to 4.2 eV, [43][44][45] and for ZnO, it is 4.2-4.52 eV. [46][47][48] The valence band offset ΔE V ¼ 1.38 V (Figure 7) is obtained from…”
Section: Resultsmentioning
confidence: 99%
“…They also find applications as surface acoustic devices [7], optical waveguides [8], gas sensors [9] and micro-machined actuators [10]. ZnO thin films have been prepared by physical deposition methods such as laser deposition [11], different sputtering methods [5,7,12,13], atomic layer deposition [6] and chemical deposition methods such as chemical vapor deposition [10], spray pyrolysis [14], chemical bath deposition [15] and the sol-gel process [16].…”
Section: Introductionmentioning
confidence: 99%