1995
DOI: 10.1016/0022-3115(95)00128-x
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High conductivity porous oxides formed on Zr-2.5 wt% Nb

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Cited by 4 publications
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“…The oxide layer was not uniform. There was black hypostoichiometric layer of relatively high conductivity near the oxide-metal interface, whereas the outer layer was white and of high resistivity, as was shown metallographically by Cox et al [14]. It is well known [7][8][9] that bulk ZrO 2 is predominantly an electronic high-resistivity semiconductor with a certain amount of ionic conduction at higher temperatures [7].…”
Section: Introductionmentioning
confidence: 79%
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“…The oxide layer was not uniform. There was black hypostoichiometric layer of relatively high conductivity near the oxide-metal interface, whereas the outer layer was white and of high resistivity, as was shown metallographically by Cox et al [14]. It is well known [7][8][9] that bulk ZrO 2 is predominantly an electronic high-resistivity semiconductor with a certain amount of ionic conduction at higher temperatures [7].…”
Section: Introductionmentioning
confidence: 79%
“…The oxide films are not homogeneous, but consist of a substoichiometric black oxide layer of high conductivity, near the metal-oxide interface, as stated by Cox et al [14], and of an almost stoichiometric white layer of high resistivity. At larger film thickness the high resistivity layer dominates.…”
Section: Activation Energymentioning
confidence: 94%
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