High-conductivity heteroepitaxial ZnSe films

Abstract

High-conductivity ZnSe single-crystalline films have been heteroepitaxially deposited on GaAs substrates using open-tube chemical vapor transport. Unintentionally doped films had net donor concentrations of 1014–1016 cm−3 and resistivities of 1–103 Ω cm. Resistivity was found to be dependent upon the zinc partial pressure present during deposition.

Chemical Vapor Deposition of Refractory Metals and Ceramics 2. Materials Research Society Symposium Proceedings Held in Boston, Massachusetts on December 4-6, 1991. Volume 250

“…For example, manganese doped layers of ZnS and ZnSe have been produced for applications as optoelectronic devices [44]. Also, doping of ZnS and ZnSe with excess zinc, indium or aluminum has been proposed as a technique to obtain conducting layers of ZnS or ZnSe [45,46]. When a second dispersed phase is incorporated in CVD materials, the resulting composite may or may not possess properties which fall in between the properties of the two phases.…”