1997
DOI: 10.1063/1.119116
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High characteristic voltages in Nb/p-type InAs/Nb Josephson junctions

Abstract: An investigation of superconductor/semiconductor/superconductor Josephson junctions with separations between the Nb superconducting electrodes down to 20 nm is presented. To achieve such short distances, a preparation technique employing an anodic Nb oxide film as a spacer has been developed. The Nb electrodes are coupled through the quasi two-dimensional electron gas in the native inversion layer at the surface of p-type InAs. High characteristic voltages up to 1.35 mV at T=2 K are observed. A sensitive depen… Show more

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Cited by 16 publications
(11 citation statements)
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“…S4). This high transparency is in line with the best results ever achieved for micrometer-scale superconductor-semiconductor interfaces (22). Besides an overall conductance enhancement, the sub-gap regime is characterized by a series of peaks in dI/dV occurring at V = Fig.…”
supporting
confidence: 87%
“…S4). This high transparency is in line with the best results ever achieved for micrometer-scale superconductor-semiconductor interfaces (22). Besides an overall conductance enhancement, the sub-gap regime is characterized by a series of peaks in dI/dV occurring at V = Fig.…”
supporting
confidence: 87%
“…In addition to the use of true heterostructures, some investigators have employed, as the coupling medium, the 2-D electron gas (2DEG) in the n-type surface inversion layer naturally present on bulk p-type InAs, 17,[22][23][24] a possibility already recognized by Silver et al The only truly successful work of this kind was that by Chrestin and Merkt, 24 who recently used Nb electrodes with separations down to 20 nm, at which point the inherent limitations of the inversion layer scheme (low electron sheet concentrations and strong surface scattering) are largely overcome by the proximity of the electrodes.…”
Section: Introductionmentioning
confidence: 99%
“…Such structures, reviewed in Ref. [25], have been realized by contacting InAs surface inversion layers [26,27] We show how to design and control MBS in a pS system with a stripe of the superconducting layer removed to form an effective one-dimensional topological supercon- ductor. This forms a pS-N-pS junction as sketched in Fig.…”
mentioning
confidence: 99%
“…Such structures, reviewed in Ref. [25], have been realized by contacting InAs surface inversion layers [26,27] or InAs/InGaAs heterostructures [28,29] with superconducting Nb or Al. Recently, it has become possible to grow an Al top layer epitaxially [24], forming a clean interface with the 2DEG.…”
mentioning
confidence: 99%