High carrier mobility in polycrystalline thin film diamond

Looi, Hui Jin; Jackman, Richard B.; Foord, John S.

doi:10.1063/1.120734

Cited by 113 publications

(52 citation statements)

References 10 publications

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“…The mechanism by which mobility is reduced is not well understood at present, though is often correlated with higher carrier concentration, possibly due to increased coulomb scattering at the interface. 30 Similar reduction in mobility was also observed after increased carrier concentration induced by MoO 3 . 18,19 To verify the high resistivity of standalone V 2 O 5 films, 100 nm of V 2 O 5 was deposited simultaneously onto an insulating SiN substrate and electrically characterised.…”

Section: à2supporting

confidence: 64%

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

Crawford

Cao

et al. 2016

Applied Physics Letters

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Surface transfer doping of hydrogen-terminated diamond has been achieved utilising V2O5 as a surface electron accepting material. Contact between the oxide and diamond surface promotes the transfer of electrons from the diamond into the V2O5 as revealed by the synchrotron-based high resolution photoemission spectroscopy. Electrical characterization by Hall measurement performed before and after V2O5 deposition shows an increase in hole carrier concentration in the diamond from 3.0x1012 to 1.8x1013cm2 at room temperature. High temperature Hall measurements performed up to 300 °C in atmosphere reveal greatly enhanced thermal stability of the hole channel produced using V2O5 in comparison with an air-induced surface conduction channel. Transfer doping of hydrogen-terminated diamond using high electron affinity oxides such as V2O5 is a promising approach for achieving thermally stable, high performance diamond based devices in comparison with air-induced surface transfer doping

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Section: à2supporting

confidence: 64%

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

Crawford

Cao

et al. 2016

Applied Physics Letters

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“…The films were around 100 mm in thickness and exhibited a random crystal morphology with typical grain sizes within the range 20 to 40 mm. Raman spectroscopy carried out using a red He±Ne excitation source showed only the sharp characteristic peak of diamond at 1332 cm ±1 with little background and no evidence of any other structure; further details have been given elsewhere [11]. Prior to the formation of contacts, the diamond was subjected to an acid treatment to remove contamination and residual sp 2 on the surface.…”

Section: Methodsmentioning

confidence: 99%

Diamond Electronics: Defect Passivation for High Performance Photodetector Operation

Whitfield

Lansley

Gaudin

et al. 2000

phys. stat. sol. (a)

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Deep UV, visible blind, photoconductive devices fabricated on polycrystalline CVD diamond using inter-digitated planar electrodes have shown promising characteristics. The`as-fabricated' device performance is insufficient for many applications; a particularly demanding example is the monitoring of high power excimer lasers operating in the UV, which ideally require visible-blind, radiation hard fast UV detectors. However, post-growth treatments can strongly modify the performance level achieved. In this paper, we show that sequentially applied treatments can progressively change both the gain and speed of these devices. We have used charge sensitive deep level transient spectroscopy (Q-DLTS) to study the effect of these treatments on the defect structure of CVD material. For the first time, we report the realisation of diamond photoconductive devices capable of operating at more than 1 MHz at 193 nm.

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“…Hydrogenation of the diamond surface termination state of diamond can result in a conducting diamond surface [10]. Free carrier absorption is another possible mechanism, with promotion of carrier into this conducting band at elevated temperatures.…”

Section: Optical Properties At Elevated Temperaturesmentioning

confidence: 99%

The Infrared Optical Properties of CVD Diamond at Elevated Temperatures

Mollart

Lewis

2001

phys. stat. sol. (a)

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The combination of low absorption and extreme mechanical and thermal properties make diamond a compelling choice for some more extreme far infrared (8-14 mm) window applications. The optical properties of CVD diamond at elevated temperatures are critical to many of these extreme applications. The absorption coefficient of diamond has been assessed on polished diamond samples with a variety of optical characteristics by heating samples up to 550 C and measuring transmission in a grating IR spectrophotometer. High temperature transmission spectra in the range 5000-200 cm --1 (2-50 mm) for CVD diamond are presented. The transmittance at near IR wavelengths %4200 cm --1 (2.5 mm) appears to be only slightly affected by elevated temperatures and the three-and two-phonon regions exhibit the expected temperature dependence. In the far infrared, the transmission drops with a broad peak approximately centred at %1250 cm --1 (8 mm), a behaviour characteristic of all samples tested. The temperature dependency of the absorption coefficient has been deduced by assuming there are no additional scatter losses from the surface and calculating the refractive index at temperature, thus allowing the reflectance at that temperature to be estimated. Direct emissivity and photo-thermal deflection measurements are in agreement with these measurements. An empirical formula for predicting the variation of absorption coefficient at %1000 cm --1 (10 mm) with temperature, is presented.

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High carrier mobility in polycrystalline thin film diamond

Cited by 113 publications

References 10 publications

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

Diamond Electronics: Defect Passivation for High Performance Photodetector Operation

The Infrared Optical Properties of CVD Diamond at Elevated Temperatures

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