High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1−xN

Donmez, Omer; Güneş, Mustafa; Erol, Ayşe; Arıkan, Mehmet Kemal; Balkan, N.

doi:10.1063/1.3660692

Cited by 7 publications

(4 citation statements)

References 29 publications

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“…Although the samples are not intentionally doped, the Hall effect results show that all the samples have n-type conductivity, and the free carrier densities are independent of the temperature; therefore, samples can be regarded as metallic-like over the whole temperature range as commonly reported by us and by other research groups [7,8,24-28]. It is clear from Figure 1a that the free carrier concentration increases by about a factor of 3 when the Ga composition increases from x = 0.06 to 0.52.…”

Section: Resultsmentioning

confidence: 63%

The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys

et al. 2012

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Electronic transport in unintentionally doped GaxIn1-xN alloys with various Ga concentrations (x = 0.06, 0.32 and 0.52) is studied. Hall effect measurements are performed at temperatures between 77 and 300 K. Temperature dependence of carrier mobility is analysed by an analytical formula based on two-dimensional degenerate statistics by taking into account all major scattering mechanisms for a two-dimensional electron gas confined in a triangular quantum well between GaxIn1-xN epilayer and GaN buffer. Experimental results show that as the Ga concentration increases, mobility not only decreases drastically but also becomes less temperature dependent. Carrier density is almost temperature independent and tends to increase with increasing Ga concentration. The weak temperature dependence of the mobility may be attributed to screening of polar optical phonon scattering at high temperatures by the high free carrier concentration, which is at the order of 1014 cm−2. In our analytical model, the dislocation density is used as an adjustable parameter for the best fit to the experimental results. Our results reveal that in the samples with lower Ga compositions and carrier concentrations, alloy and interface roughness scattering are the dominant scattering mechanisms at low temperatures, while at high temperatures, optical phonon scattering is the dominant mechanism. In the samples with higher Ga compositions and carrier concentrations, however, dislocation scattering becomes more significant and suppresses the effect of longitudinal optical phonon scattering at high temperatures, leading to an almost temperature-independent behaviour.

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Section: Resultsmentioning

confidence: 63%

The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys

et al. 2012

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“…In this study, the optical bandgap of many indium-doped cadmium oxide (CdO:In) thin films were investigated using the two band k·p model [13] which proved successful for InN [14], Ga x In 1-x N [15], ZnO [16], and CdS [16]. Though Kane's two band k·p model was derived from InSb which shows a different valence band dispersion shape at the Gamma point compared to CdO, this model has been previously used to predict the Fermi level in CdO films and good agreement with the experimental data was obtained [5,17].…”

Section: Introductionmentioning

confidence: 99%

Dopant-induced band filling and bandgap renormalization in CdO : In films

Zhu¹,

Mendelsberg²,

Zhu³

et al. 2013

J. Phys. D: Appl. Phys.

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The effect of carrier concentration on the Fermi level and bandgap renormalization in over 30 indium-doped cadmium oxide (CdO:In) films with carrier concentrations ranging from 1 to 15×10 20 cm -3 was studied by using the two band k·p model with electron-electron and electron-ion interactions.It is shown that the Tauc relation, which is based on parabolic valence and conduction bands, overestimates the optical bandgap in CdO films. Theoretical calculations of the optical bandgap give good agreement with experiments by taking into account the Burstein-Moss effect for a nonparabolic conduction band and bandgap renormalization effects. The band filling and bandgap renormalization in these CdO:In films are about 0.5~1.2 eV and 0.1~0.3 eV, respectively.

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“…where Eg InGaN is the band gap converted from the emission wavelength, Eg InN and Eg GaN are the band gaps of InN (0.7 eV) and GaN (3.4 eV), x is the composition ratio of In in InGaN, and b is the bowing parameter of 2.5 eV. 2,51) According to the calculation, the bandgap and In-content of InGaN in sample B2 are about 3.15 eV and 4.9%, respectively. The energy bandgaps and In-contents of samples B1∼9 estimated in this way are also shown in Table II.…”

Section: Characterization Of Ingan Grown On Gan:gementioning

confidence: 99%

Growth and characterization of Mg-doped GaN and InGaN nanopillar-crystals based on steering-crystal-formed multi-crystalline Si substrates

Xue,

Taniguchi,

Oridate

et al. 2023

Jpn. J. Appl. Phys.

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In our past research, Group-III nitride nanopillar crystals were grown vertically on the multi-crystalline silicon substrate and applied to surface-emitting LEDs. To discuss the further possibilities of this kind of LEDs, such as application in deep visible, Mg-doped GaN and InGaN as important parts of the LEDs were grown under various conditions. Different testing experiments were carried out on these GaN-related samples to clarify their surface morphologies and luminescence characteristics. It was confirmed that Mg was successfully doped into GaN grown on the multi-crystalline silicon substrate. InGaN with a wide range of In-contents was obtained by using the same substrate. It is believed that these materials can be applied to various optoelectronic devices, especially large-area light-emitting devices with emissions of more colors, by analyzing the various properties.

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High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1−xN

Cited by 7 publications

References 29 publications

The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys

The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys

Dopant-induced band filling and bandgap renormalization in CdO : In films

Growth and characterization of Mg-doped GaN and InGaN nanopillar-crystals based on steering-crystal-formed multi-crystalline Si substrates

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