High Capacitance Porous Ruthenium Nitride Films with High Rate Capability for Micro‐Supercapacitors

Abstract

The demand for high‐performance energy storage devices to power Internet of Things applications has driven intensive research on micro‐supercapacitors (MSCs). In this study, RuN films made by magnetron sputtering as an efficient electrode material for MSCs are investigated. The sputtering parameters are carefully studied in order to maximize film porosity while maintaining high electrical conductivity, enabling a fast charging process. Using a combination of advanced techniques, the relationships among the morphology, structure, and electrochemical properties of the RuN films are investigated. The films are shown to have a complex structure containing a mixture of crystallized Ru and RuN phases with an amorphous oxide layer. The combination of high electrical conductivity and pseudocapacitive charge storage properties enabled a 16 µm‐thick RuN film to achieve a capacitance value of 0.8 F cm−2 in 1 m KOH with ultra‐high rate capability.