High capability, quasi-closed growth system for isothermal vapour phase epitaxy of (Hg, Cd)Te

Piotrowski, J.; Nowak, Z.; Grudzień, M.; Galus, W.; Adamiec, Krzysztof; Djurić, Z.; Jović, V.; Djinovic, Z.

doi:10.1016/0040-6090(88)90247-7

Cited by 20 publications

(10 citation statements)

References 5 publications

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“…Our results show that in the layers obtained a surface gradient of ~0.001 gm-1 can be obtained even for relatively thin layers (~ 30 gm) [120]. A very similar result is quoted in [251; that is, for layers ~ 50 txm thick, the composition within 10 gm of the surface varies from +0.01 to + 0.02.…”

Section: The Crystal Quality and The Composition Uniformity Of Isovpesupporting

confidence: 75%

Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te

Djurić

1995

J Mater Sci: Mater Electron

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Isothermal vapour-phase epitaxy (ISOVPE) was the earliest process to be developed for the fabrication of epitaxial mercury-cadmium telluride layers. Although the process was somewhat neglected in the previous period, mostly because of the appearance of metalorganic chemical vapour phase epitaxy and molecular-beam epitaxy, the results of the most recent investigations show that the application of this method can be expected in the second generation of photovoltaic (PV) or metal-insulator-semiconductor (MIS) detectors in the focal plane. This review paper presents the development of ISOVPE giving a complete theoretical model of the process, which is based on fundamental results in the field of phase diagrams of the (Hg,Cd)Te the interdiffusion of Hg and Cd, gas-phase transport, etc. Using the results of this theoretical model, a production system for ISOVPE was designed, in which the deposition process, the high-temperature annealing for composition homogenization and the low-temperature annealing for the achievement of the desired epitaxial-layer doping are all performed in the same cycle. Finally, the basic electrical and optical characteristics of ISOVPE layers are analysed. It is shown that in applications of the fabrication of PV and MIS detector arrays a full affirmation of this technology can be expected.

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Section: The Crystal Quality and The Composition Uniformity Of Isovpesupporting

confidence: 75%

Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te

Djurić

1995

J Mater Sci: Mater Electron

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“…The solution was a unique production−type atmospheric pressure system was deve− loped in cooperation with Djuric's group from Belgrade University [47,48] and has been used for commercial fabri− cation of HgCdTe photodetectors for many years. The epi− taxial system shown in Fig.…”

Section: Open Tube Isovpe Growthmentioning

confidence: 99%

Uncooled MWIR and LWIR photodetectors in Poland

Piotrowski

Pawluczyk

Piotrowski

et al. 2010

Opto-Electron. Rev.

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The history, status, and recent progress in the middle and long wavelength Hg 1-x HgCdTe photodetectors in Poland The Institute of Physics Polish Academy of SciencesThe HgCdTe research began in 1960 at the Institutes of Physics of Warsaw University and Polish Academy of Scien− ces (IFPAN), Warsaw. Bridgman technique with sealed thick wall quartz ampoules was used to grow material sui− table for research and experimental devices. The explosions caused by the high mercury pressure were quite frequent that time, resulting in a few series accidents. The grown ma− terial was used for optical and galvanomagnetic studies. The studies were aimed at determination of energy band struc− ture of the material. The Hg 1−x Cd x Te studies were for a long time the main topics of numerous meetings on solid state physics and electronics in Poland. The studies were impor− tant contribution to the understanding of fundamental pro− perties of the material.Simple photoconductive, photoelectromagnetic, and photovoltaic devices based on the bulk MCT crystals were demonstrated already in 1963 [5]. Interesting, the first pho− tovoltaic devices were based on n−on−p junctions that were formed at perimeter of MCT ingots during cool down pe− riod. Later, IFPAN scientists concentrated their efforts on diluted magnetic semiconductors such as Hg 1−x Mn x Te, less useful for infrared photodetectors. The Military University of TechnologyIn 1968, device−oriented research started at the Military Uni− versity of Technology (MUT), Warsaw (see Ref. 6 and related papers therein). Initially, modification of the isothermal vapour phase epitaxy (ISOVPE) discovered by Cohen−Solal et al. [7] in France, was applied. The original process relies on near− −equilibrium isothermal evaporation of HgTe upon a thick CdTe substrate [ Fig. 1(a)]. Interdiffusion of the grown layer with the substrate material yields variable gap structures.In the Polish modification [8] [ Fig. 1(b)], the hybryde substrates with thin CdTe layers were used rather than the bulk CdTe. The layers had been deposited by vacuum evapo− ration on low−cost and readily available substrates such as mica, silicon, sapphire and other. Limited amount of HgTe was then deposited by ISOVPE and the process was carried out up to complete homogenization. As the result, extremely uniform epitaxial layers were grown.

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“…at VIGO system [44,45]. A production−type reusable atmospheric pressure sys− tem for ISOVPE that allows a large area of multiple layers to be grown in one growth run is shown in Fig.…”

Section: Commercialization Of Hgcdte Detectorsmentioning

confidence: 99%

History of HgTe-based photodetectors in Poland

Rogalski

2010

Opto-Electronics Review

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In Poland, the HgCdTe studies began in 1960 at the Institute of Physics, Warsaw University. The material processing laboratory was created by Giriat and later by Dziuba, Gałązka, and others. Bridgman technique with sealed thick wall quartz ampoules was used to grow material suitable for research and experimental devices. Among the first papers published in 1961 and 1963 there were the Polish works devoted to preparation, doping, and electrical properties of HgCdTe.Infrared detector’s research and development efforts in Poland were concentrated mostly on uncooled market niche. At the beginning, a modified isothermal vapour phase epitaxy has been used for research and commercial fabrication of photoconductive, photoelectromagnetic and other HgCdTe devices. Bulk growth and liquid phase epitaxy were also used. Recently, the fabrication of infrared devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition.At present stage of development, the photoconductive and photoelectromagnetic (PEM) detectors are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, photodiodes offer high performance and very fast response. However, conventional photovoltaic uncooled detectors suffer from low quantum efficiency and very low junction resistance. The problems have been solved with advanced band gap engineered architecture, multiple cell heterojunction devices connected in series, and monolithic integration of the detectors with microoptics.In final part of the paper, the Polish achievements in technology and performance of HgMnTe and HgZnTe photodetectors are presented.

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High capability, quasi-closed growth system for isothermal vapour phase epitaxy of (Hg, Cd)Te

Cited by 20 publications

References 5 publications

Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te

Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te

Uncooled MWIR and LWIR photodetectors in Poland

History of HgTe-based photodetectors in Poland

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