2002
DOI: 10.1109/2944.999187
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High brightness AlGaInP light-emitting diodes

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Cited by 179 publications
(87 citation statements)
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“…A number of strategies have been employed to improve the extraction efficiency by using surface roughening, chip shaping, and nonresonant or resonant cavity effects. [1][2][3][4][5] In this letter, we introduce a way to improve light extraction by using arrays of micron sized LEDs ͑ -LEDs͒ with parabolic sidewalls to direct the emission through the transparent substrate. The active region contains self-assembled In͑Ga͒As quantum dots ͑QDs͒ on a GaAs substrate.…”
Section: Broadband Quantum Dot Micro-light-emitting Diodes With Parabmentioning
confidence: 99%
“…A number of strategies have been employed to improve the extraction efficiency by using surface roughening, chip shaping, and nonresonant or resonant cavity effects. [1][2][3][4][5] In this letter, we introduce a way to improve light extraction by using arrays of micron sized LEDs ͑ -LEDs͒ with parabolic sidewalls to direct the emission through the transparent substrate. The active region contains self-assembled In͑Ga͒As quantum dots ͑QDs͒ on a GaAs substrate.…”
Section: Broadband Quantum Dot Micro-light-emitting Diodes With Parabmentioning
confidence: 99%
“…However, the TS approach suffers from the use of costly GaP substrates and a complicated wafer bonding process (Kish et al, 1995). Yet another way of improving AlGaInP device performance is the use of wafer-fused thin film LEDs with metal micro-reflectors for significantly increased light extraction (Streubel et al, 2002). The thin-film LEDs discussed by Streubel et al (2002) incorporate micro-reflectors that redirect waveguided modes towards the chip surface.…”
Section: Introductionmentioning
confidence: 99%
“…Light emitting diodes (LEDs) are gradually replacing conventional fluorescent lamps and incandescent lights due to their higher efficacy and longer lifespans [1]- [8]. LED drivers provide regulated or controlled currents to LEDs for constant lighting or dimming, regardless of source voltage changes and temperature variations.…”
Section: Introductionmentioning
confidence: 99%