High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Qi, Ming; Nomoto, Kazuki; Zhu, Mingxin; Hu, Zongyang; Zhao, Yang; Protasenko, Vladimir; Song, Bo; Yan, Xiaodong; Li, Guowang; Verma, Jai; Bader, Samuel James; Fay, Patrick; Xing, Huili Grace; Jena, Debdeep

doi:10.1063/1.4936891

Cited by 56 publications

(45 citation statements)

References 21 publications

(16 reference statements)

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“…It is necessary to fabricate the devices on each plane to compare these material properties. There are several studies about power devices fabricated on the c‐plane ; however, there are only few studies about m‐plane power devices . Furthermore, considering the design of practical devices, device fabrication with an epitaxial drift layer is required.…”

Section: Introductionmentioning

confidence: 99%

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Tanaka

Barry

Nagamatsu

et al. 2017

Phys. Status Solidi A

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In this study, GaN m‐plane Schottky barrier diodes fabricated with a metalorganic vapor‐phase epitaxy on a GaN substrate were investigated using emission microscope, photoluminescence, and cathodoluminescence. In addition, facet dependence of leakage current under reverse‐biased condition was observed. We showed that the leakage‐current distribution was caused by the facet dependence of the carrier concentration and oxygen concentration. These results can provide important suggestions for the fabrication of m‐plane devices. (a) four‐faceted hillocks on m‐plane GaN MOVPE sample, facet dependence of (b) leakage current and (c) PL peak intensity of the m‐plane GaN Schottky barrier diode.

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Section: Introductionmentioning

confidence: 99%

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Tanaka

Barry

Nagamatsu

et al. 2017

Phys. Status Solidi A

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“…Published by AIP Publishing. https://doi.org/10.1063/1.5028530 III-nitride (III-N) materials have seen huge success in both electronics [1][2][3][4][5][6] and optoelectronics, [7][8][9][10][11][12][13][14][15][16] including power diodes, [1][2][3][4][5][6] solid-state lighting, [7][8][9][10][11][12] and integrated photonics. [13][14][15][16] Ternary InGaN alloys, in particular, have emerged in recent years as promising candidates for photovoltaic (PV) applications, [17][18][19][20][21][22] especially for high temperature PV applications, terrestrial photovoltaic thermal (PVT) hybrid solar collector systems, space applications, and top cells in multi-junction (MJ) solar cells.…”

mentioning

confidence: 99%

Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers

Huang

Chen

et al. 2018

Applied Physics Letters

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In this paper, we perform a comprehensive study on energy band engineering of InGaN multi-quantum-well (MQW) solar cells using AlGaN electron- and hole-blocking layers. InGaN MQW solar cells with AlGaN layers were grown by metalorganic chemical vapor deposition, and high crystal quality was confirmed by high resolution X-ray diffraction measurements. Time-resolved photoluminescence results showed that the carrier lifetime on the solar cells with AlGaN layers increased by more than 40% compared to that on the reference samples, indicating greatly improved carrier collections. The illuminated current-density (J–V) measurements further confirmed that the short-circuit current density (Jsc) of the solar cells also benefited from the AlGaN layer design and increased 46%. At room temperature, the InGaN solar cells with AlGaN layers showed much higher power conversion efficiency (PCE), by up to two-fold, compared to reference devices. At high temperatures, these solar cells with AlGaN layers also delivered superior photovoltaic (PV) performance such as PCE, Jsc, and fill factor than the reference devices. These results indicate that band engineering with AlGaN layers in the InGaN MQW solar cell structures can effectively enhance the carrier collection process and is a promising design for high efficiency InGaN solar cells for both room temperature and high temperature PV applications.

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“…Wurtzite III-nitride semiconductors have been extensively investigated in optoelectronics [1][2][3][4][5][6][7][8][9][10][11] and high electron mobility transistors (HEMTs). 12,13 Recently, GaN based power diodes such as p-n diodes [14][15][16][17] and Schottky diodes 18 have gained considerable attention for power switching applications due to their high frequency capability and large critical electrical field. However, conventional GaN power diodes were heteroepitaxially grown on foreign substrates such as sapphire, [19][20][21][22] which led to large dislocation densities (>10 9 cm À2 ) in the materials.…”

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confidence: 99%

“…Furthermore, Ohta et al 15 proposed a multidrift-layer (MDL) design for GaN PN diodes, which increased the V BD of the device to 4.7 kV. Despite these encouraging results, GaN PN diodes typically have a very large turn-on voltage (V ON ) of >3 V, 16 which leads to large power loss for power switching applications. The two main loss mechanisms in a power switch are conduction loss (P C ) and switching loss (P S ).…”

mentioning

confidence: 99%

Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers

Huang

Chen

et al. 2017

Applied Physics Letters

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This letter reports the implementation of double-drift-layer (DDL) design into GaN vertical Schottky barrier diodes (SBDs) grown on free-standing GaN substrates. This design balances the trade-off between desirable forward turn-on characteristics and high reverse breakdown capability, providing optimal overall device performances for power switching applications. With a wellcontrolled metalorganic chemical vapor deposition process, the doping concentration of the top drift layer was reduced, which served to suppress the peak electric field at the metal/GaN interface and increase the breakdown voltages of the SBDs. The bottom drift layer was moderately doped to achieve low on-resistance to reduce power losses. At forward bias, the devices exhibited a record low turn-on voltage of 0.59 V, an ultra-low on-resistance of 1.65 mX cm 2 , a near unity ideality factor of 1.04, a high on/off ratio of $10 10 , and a high electron mobility of 1045.2 cm 2 /(V s). Detailed comparisons with conventional single-drift-layer (SDL) GaN vertical SBDs indicated that DDL design did not degrade the forward characteristics of the SBDs. At reverse bias, breakdown voltages of the DDL GaN SBDs were considerably enhanced compared to those of the conventional SDL devices. These results showed that GaN vertical SBDs with DDL designs are promising candidates for high efficiency, high voltage, high frequency power switching applications.

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High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Cited by 56 publications

References 21 publications

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers

Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers

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