High-bias current voltage temperature characteristics of undoped rf magnetron sputter deposited boron carbide (B₅C)/p-type crystalline silicon heterojunctions

Abstract

The high-bias behaviour of the dark forward and reverse current-voltage (I-V ) characteristics of an undoped radio frequency (rf) magnetron sputter deposited boron carbide (p-B 5 C)/p-type crystalline silicon heterojunction has been investigated at different ambient temperatures (130-300 K). The experimental forward current-voltage-temperature (I-V -T ) characteristics indicate that the non-ohmic bulk conduction mechanisms operable in the highly resistive polycrystalline B 5 C counterpart material of this heterojunction largely determine the behaviour of its forward current at high-bias voltages (>0.3 V). The hopping conduction model of Apsley and Hughes for a flat density of localized energy states (Apsley N and Hughes H P 1975 Phil. Mag. 31 1327) can be utilized to elucidate the bias dependence of the measured heterojunction forward current over an extended bias-voltage range (0.4-2.7 V) at temperatures below 260 K. On the other hand, the junction-like conduction processes occurring in the depletion region should limit the high-bias behaviour of the measured heterojunction reverse current. Bardeen's model for a modified Schottky-like barrier at the p-B 5 C/p + -Si interface can be satisfactorily applied to describe the reverse current-voltage characteristics at bias voltages larger than 0.4 V.

Transient reverse current phenomenon in a p-n heterojunction comprised of poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) and ZnO nanowall

“…The reduction of the parameter m as increasing temperature is consistent with the trap-limited SCLC conduction model. [9][10][11][12][13][14][15] Figure 3 shows typical reverse recovery characteristics of the PEDOT:PSS/ZnO nanowall network p-n heterojunction diode when it is suddenly switched from forward ͑+3 V͒ to reverse bias ͑−3 V͒. A series of 6 V square wave voltage pulses with a 1 ms pulse duration were applied and the current response was simultaneously recorded in an oscilloscope.…”

Comparison of Adsorbed Orthocarborane and Metacarborane on Metal Surfaces

“…There is a resurgence in the study of the electronic structure of gaseous (isolated) − and adsorbed − cage borane compounds. In part, this interest has been motivated by the applications of borane cage molecules as source compounds for boron−carbon semiconductors and boron-carbide semiconductor device fabrication. ,− Orthocarborane is now the source molecule of choice for making heterojunction diodes, − transistors, tunnel diodes, homojunction diodes, and solid-state neutron detectors 24 that exploit semiconducting boron carbide. The closo -dicarbadodecaborane icosahedral cage molecules orthocarborane(1,2), metacarborane(1,7), and paracarborane(1,12) are isomers with the stoichiometric composition C 2 B 10 H 12 , differing only by carbon placement within the cage.…”

p-TlGaSeS/n-BN heterojunction as a microwave filter and as a photovoltaic device

“…As the TlGaSeS crystal exhibit various trapping states in its energy bandgap , the effects of trap distribution on the conduction mechanism of the pn diode need to be considered. To give significance to the apparent current behavior, the I – V characteristics were analyzed in accordance with the Frenkel–Poole and Richardson–Schottky model, in which the current is presented by with .…”

“…When Schottky‐type emission is dominant n = η = 1, γ = 0. On the other hand, the Frenkel–Poole effect requires n = 2, η = 1, γ = 1, and the value of φ 0 is replaced by the trapping center energy E o ( φ 0 = E 0 ) . The main difference between the PF and RS conduction mechanisms is that in the PF mechanism electrons that originate from trapping states conduct by gaining enough thermal energy for them to become free from the trap, while in the RS mechanism the electrons are injected from the high‐concentration region to low‐concentration region by electric‐field‐assisted thermionic emission or simply by tunneling.…”