2016
DOI: 10.1109/lpt.2016.2581318
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High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications

Abstract: Gallium-nitride (GaN) based light-emitting diodes (LEDs) are highly-efficient sources for general purpose illumination. Visible light communications (VLC) uses these sources to supplement existing wireless communications by offering a large, licence-free region of optical spectrum. Here we report on progress in the development of micro-scale GaN LEDs (micro-LEDs), optimized for VLC. These blue-emitting micro-LEDs are shown to have very high electrical-to-optical modulation bandwidths, exceeding 800 MHz. The da… Show more

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Cited by 287 publications
(171 citation statements)
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“…At 450 nm, micro-LEDs have set the standard for high-speed VLC. A 60 μm diameter pixel has achieved 3 Gb/s [6], and more recently a single pixel of a new segmented array has demonstrated 5 Gb/s [7]. The novel micro-LEDs emitting at 400 nm featured in the current work offer a number of advantages over the 450 nm devices previously reported [7].…”
Section: Introductionmentioning
confidence: 75%
See 1 more Smart Citation
“…At 450 nm, micro-LEDs have set the standard for high-speed VLC. A 60 μm diameter pixel has achieved 3 Gb/s [6], and more recently a single pixel of a new segmented array has demonstrated 5 Gb/s [7]. The novel micro-LEDs emitting at 400 nm featured in the current work offer a number of advantages over the 450 nm devices previously reported [7].…”
Section: Introductionmentioning
confidence: 75%
“…A 60 μm diameter pixel has achieved 3 Gb/s [6], and more recently a single pixel of a new segmented array has demonstrated 5 Gb/s [7]. The novel micro-LEDs emitting at 400 nm featured in the current work offer a number of advantages over the 450 nm devices previously reported [7]. From typical trends concerning the internal quantum efficiency (IQE) of indium GaN-based active regions, comparable IQEs are expected at 400 and 450 nm, whereas the IQE decreases steeply at shorter emission wavelengths [8].…”
Section: Introductionmentioning
confidence: 99%
“…18 Thus, the carrier lifetime of typical LEDs can be reduced on the order of ns, while the shortest reported value of μLEDs is 0.1 ~ 0.2 ns with the advantage of operating at high current density. 4,18 The highest reported bandwidths in QW LEDs are saturated near 1 GHz (GaN) and 1.7 GHz (GaAs). 4,6,7,19 …”
Section: Fundamentals Of Modulation For Lasers and Ledsmentioning
confidence: 99%
“…4,18 The highest reported bandwidths in QW LEDs are saturated near 1 GHz (GaN) and 1.7 GHz (GaAs). 4,6,7,19 …”
Section: Fundamentals Of Modulation For Lasers and Ledsmentioning
confidence: 99%
“…3 However, LED bandwidth is limited by the material carrier lifetime and efficiency is lowered when increasing the carrier density.…”
Section: Introductionmentioning
confidence: 99%