High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes

Quan, Zhiheng; Dinh, Duc V.; Presa, Silvino; Roycroft, B.; Foley, Ann; Akhter, Mahbub; O’Mahony, Donagh; Maaskant, Pleun; Caliebe, Marian; Scholz, F.; Parbrook, P. J.; Corbett, Brian

doi:10.1109/jphot.2016.2596245

Cited by 19 publications

(8 citation statements)

References 33 publications

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“…More recently, the development of sub-100 µm sized LEDs in the form of µLEDs has rejuvenated the field of VLC. The miniaturized chips that are developed with nitride µLEDs yield a small RC time constant, thereby offering high-speed operation with optical bandwidths ranging from several hundred MHz to a few GHz [136][137][138][139][140][141][142][143][144][145]. As shown in Figure 8a, most of these reported devices operate in the green and blue emission wavelengths, though a number of white LEDs have also been utilized to attain data rates in the gigabits/second range [135,136,140,[146][147][148][149][150].…”

Section: Nitride Leds For Visible Light Communicationmentioning

confidence: 99%

III-Nitride Light-Emitting Devices

et al. 2021

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III-nitride light-emitting devices have been subjects of intense research for the last several decades owing to the versatility of their applications for fundamental research, as well as their widespread commercial utilization. Nitride light-emitters in the form of light-emitting diodes (LEDs) and lasers have made remarkable progress in recent years, especially in the form of blue LEDs and lasers. However, to further extend the scope of these devices, both below and above the blue emission region of the electromagnetic spectrum, and also to expand their range of practical applications, a number of issues and challenges related to the growth of materials, device design, and fabrication need to be overcome. This review provides a detailed overview of nitride-based LEDs and lasers, starting from their early days of development to the present state-of-the-art light-emitting devices. Besides delineating the scientific and engineering milestones achieved in the path towards the development of the highly matured blue LEDs and lasers, this review provides a sketch of the prevailing challenges associated with the development of long-wavelength, as well as ultraviolet nitride LEDs and lasers. In addition to these, recent progress and future challenges related to the development of next-generation nitride emitters, which include exciton-polariton lasers, spin-LEDs and lasers, and nanostructured emitters based on nanowires and quantum dots, have also been elucidated in this review. The review concludes by touching on the more recent topic of hexagonal boron nitride-based light-emitting devices, which have already shown significant promise as deep ultraviolet and single-photon emitters.

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Section: Nitride Leds For Visible Light Communicationmentioning

confidence: 99%

III-Nitride Light-Emitting Devices

et al. 2021

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“…The proposed model will be applicable to all semiconductor LED structures having MQW. Literature [13][14][15] justifies the statement, as well. InGaN/GaN-based LED [13] is a five-well structure, the LED described in Ref.…”

Section: Comparison Of Optical Characteristics Of the Proposed Design...mentioning

confidence: 63%

Opto-Electronics Review

Sharma,

Sharma

2021

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This research paper discusses an analytical approach to designing the active region of light emitting diodes to enhance its performance. The layers in the active region were modified and the effects of changing the width of quantum well and barrier layers in a multiquantum light emitting diode on the output power and efficiency have been investigated. Also, the ratio of the quantum well width to the B layer width was calculated and proposed in this research paper. The study is carried out on two different LED structures. In the first case, the width of the quantum well layers is kept constant while the width of the B layers is varied. In the second case, both the quantum well and B layer widths are varied. Based on the simulation results, it has been observed that the LED power efficiency increases considerably for a given quantum well to B layers width ratio without increasing the production complexity. It is also seen that for a desired power efficiency the width of quantum well should be between 0.003 µm and 0.006 µm, and the range of B width (height) should be 2.2 to 6 times the quantum well width. The proposed study is carried out on the GaN-AlGaN-based multi-quantum well LED structure, but this study can be extended to multiple combinations of the semiconductor structures.

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“…On the other hand, nonpolar and semipolar LEDs offer a reduction in recombination lifetime due to their larger wavefunction overlaps . The modulation bandwidths as a function of current density for selected nonpolar and semipolar planes are compared with reported c‐ plane micro‐LEDs in Figure . Nonpolar and semipolar LEDs offer significantly enhanced modulation bandwidths at much lower current densities, which is beneficial for minimizing power consumption and efficeincy droop.…”

Section: Successes and Challengesmentioning

confidence: 99%

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

Monavarian

Rashidi

Feezell

2018

Phys. Status Solidi A

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The performance of III-nitride devices is degraded by polarization in a wurtzite crystal structure. Nonpolar and semipolar III-nitrides have been extensively studied since the early 2000s as a solution to the polarizationrelated issues. Removal of polarization is expected to improve the radiative efficiency, optical gain, charge transport, and potentially offer solutions to the challenging problems in III-nitride light-emitting diodes (LEDs) known as efficiency droop and the green gap. In addition, use of nonpolar and semipolar orientations is also predicted to offer polarization pinning in some devices due to anisotropic in-plane strain. Despite the many potential advantages over c-plane, nonpolar and semipolar optoelectronic devices have not successfully replaced conventional c-plane devices in the commercial sector. Here, nonpolar and semipolar III-nitrides are reviewed after more than a decade of development. The successes and challenges of nonpolar and semipolar orientations for applications such as LEDs, laser diodes, superluminescent diodes, and vertical-cavity surface emitting lasers are discussed. New potential avenues for nonpolar and semipolar III-nitrides are also highlighted, including visible-light communication and power electronics. The availability of low-cost, high-crystal-quality substrates with nonpolar or semipolar orientation is discussed and alternative approaches for realizing these orientations are presented, including selective-area bottom-up nanostructures.

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High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes

Cited by 19 publications

References 33 publications

III-Nitride Light-Emitting Devices

III-Nitride Light-Emitting Devices

Opto-Electronics Review

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

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