High-average-power semiconductor laser arrays and laser array packaging with an emphasis on pumping solid state lasers

Solarz, R.; Beach, Raymond; Benett, Bill; Freitas, B.L.; Emanuel, M.A.; Albrecht, G.; Comaskey, B.; Sutton, S.B.; Krupke, William F.

doi:10.1017/cbo9780511524127.007

Cited by 5 publications

(3 citation statements)

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“…Since the diode output facet is usually the most susceptible to damage, the OID limit of the system is located there. COD values for diode facets vary widely, typically from 1 to 20 MW cm −2 , the exact value depending upon the diode material system, optical coating, and facet passivation techniques [3], although COD values have continued to rise since that study. A typical value for the saturation intensity of a GaAs semiconductor laser is 0.5 MW cm −2 [4].…”

Section: Yb Er:glass Laser-pumped Intracavity To a 977 Nm Diode Lasermentioning

confidence: 99%

Rigrod laser-pumped-laser resonator model: II. Application to thin and optically-dilute laser media

Brown¹

2014

Laser Phys.

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In part I of this paper, and to set the foundation for this part II, we derived the resonator equations describing the normalized intensities, output power, gain, and extraction efficiency for a standard resonator incorporating two dielectric mirrors and a gain element. We then generalized the results to include an absorbing region representing a second laser crystal characterized by a small-signal transmission T 0 . Explicit expressions were found for the output power extracted into absorption by the second laser crystal and the extraction efficiency, and the limits to each were discussed. It was shown that efficient absorption by a thin or dilute second laser crystal can be realized in resonators in which the mirror reflectivities were high and in which the single-pass absorption was low, due to the finite photon lifetime and multi-passing of the absorbing laser element. In this paper, we apply the model derived in part I to thin or dilute laser materials, concentrating on a Yb, Er:glass intracavity pumped by a 946 nm Nd:YAG laser, a Yb, Er:glass laser-pumped intracavity by a 977 nm diode laser, and an Er:YAG laser-pumped intracavity to a 1530 nm diode laser. It is shown that efficient absorption can be obtained in all cases examined.

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Section: Yb Er:glass Laser-pumped Intracavity To a 977 Nm Diode Lasermentioning

confidence: 99%

Rigrod laser-pumped-laser resonator model: II. Application to thin and optically-dilute laser media

Brown¹

2014

Laser Phys.

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“…Both microchannel and impingement coolers have been developped in order to produce two -dimensional stacks arrays packages with low thermal resistance coolers. A few laser diodes manufacturers [2] master the fabrication of stacks arrays delivering an optical power density up to 2.5 kW/cm2 for duty cycles up to 4% (i.e 400 is at 100 Hz). We report the development of a new concept for stacking linear bar arrays which leads to power density of 10 kW/cm2.…”

Section: Introductionmentioning

confidence: 99%

“…Beam radius (mm) 2 and has an emitting surface of 1.2 x 9.6 mm. It is operated at a peak current level of 100 A, a pulse duration of150 ts and a nominal peak optical power of 1000W.…”

mentioning

confidence: 99%

High-brightness stack arrays for DPSSL laser applications

et al. 1998

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For DPSSL applications at low duty cycle (typically 15Ois/2O Hz), we have developed a new concept of 'High Brigthness' stacked arrays, which leads to power density of 10 kW/cm2, and to 40 kW/cm2 when directly coupled to a lensduct. . The high intensity is made possible thanks to a new proprietary stacking technology [1] that permits a stacking pitch of only 100 im : the principle is to directly stack the arrays without any heat spreaders other than the arrays themselves. When compared to standard commercial QCW stacked arrays, the benefits of using these high brightness laser diodes pumping sources are the following:-an important cost reduction related to a drastic simplification in the assembling process.-an improved pumping efficiency associated with an improved brightness ('a factor 4), consequence of a reduced pitch between linear bar arrays.High-efficiency, frequency-quadrupled, end-pumped 8 mJ, 12-ns-long UV pulses @ O.266im Nd:YAG laser has been developped using these High Brightness pump sources This air-cooled laser is an attractive alternative to the more conventional millijoules-range UV source.A compact high energy 300 mJ Q -Switched diode -pumped laser has been developped. Laser performances and integration level demonstration contribute to a preliminary laser design for future airbown laser applications.

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6 W CW front-facet power from short-cavity (0.5 mm), 100 [micro sign]m stripe Al-free 0.98 [micro sign]m-emitting diode lasers

et al. 1997

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High-average-power semiconductor laser arrays and laser array packaging with an emphasis on pumping solid state lasers

Cited by 5 publications

References 0 publications

Rigrod laser-pumped-laser resonator model: II. Application to thin and optically-dilute laser media

Rigrod laser-pumped-laser resonator model: II. Application to thin and optically-dilute laser media

High-brightness stack arrays for DPSSL laser applications

6 W CW front-facet power from short-cavity (0.5 mm), 100 [micro sign]m stripe Al-free 0.98 [micro sign]m-emitting diode lasers

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