High-aspect-ratio single-crystalline porous In2O3 nanobelts with enhanced gas sensing properties

A high performance methanol gas sensor based on palladium-platinum-In2O3 composited nanocrystalline SnO2

“…A comparison between the sensing performances of the sensor and the literature reports is summarized in Table 2. As has been shown, there are various gas sensing materials were used to detect methanol gas [11,21,22,25,33,34,[36][37][38][39][40][41][42][43][44][45], including n-type and p-type oxide semiconductors, such as porous In 2 O 3 nanobelts [36], SnO 2 inverse opal [21], WO 3 particles [43], CuO thin film [45] and so on. However, the gas response values of these materials toward methanol are all poor, and the operating temperatures are quite high.…”

Influence of Mn Doping on the Sensing Properties of SnO<sub>2</sub> Nanobelt to Ethanol

“…As expressed by Equations (8)- (10), Mn ions may enhance the surface dehydrogenation resulting in the oxidation of ethanol needs lower energy, so that the liberation of electrons will be promoted [33] [34]. Hence, the electric conductivity of SnO 2 NB increases.…”

Preparation and characterization of Al 2x In 2−2x O 3 films deposited on MgO (1 0 0) by MOCVD

“…Therefore, a new ternary semiconductor material with the modulation of band gap in a larger range is urgently needed to meet the requirements of future ultraviolet photoelectric devices. In 2 O 3 , with an optical band gap of 3.7 eV [22], is a very important transparent oxide semiconductor (TOS) material owing to its physically stability and chemically inertness which has been widely used in many fields such as photovoltaic devices and gas sensors [23,24]. However, the fundamental band gap of In 2 O 3 is about 2.93 eV, which is determined by many experimental and theoretical investigations [25].…”