High-Aspect-Ratio Ruthenium Lines for Buried Power Rail

Gupta, Anshul; Kundu, Shreya; Teugels, Lieve; Bömmels, J.; Adelmann, Christoph; Heylen, N.; Jamieson, Geraldine; Pedreira, O. Varela; Ciofi, Ivan; Chava, Bharani; Wilson, Christopher J.; Tőkei, Zsolt

doi:10.1109/iitc.2018.8430415

Cited by 45 publications

(18 citation statements)

References 3 publications

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“…see that Ru_5 has a much smoother surface as a result of the spacer defined integration scheme that was used for these samples [9].…”

Section: A Sample Descriptionmentioning

confidence: 99%

“…The roughness of (a) Ru_1 and (b) Ru_3 is large because of the metal etch used in the process [8]. (c) Ru_5 lines are wider and have a much smoother surface because no metal etch was used [9]. In all cases, large grains that span the full thickness of the line can be observed.…”

Section: A Sample Descriptionmentioning

confidence: 99%

“…We studied five types of Ru interconnects, four of which are fabricated using the subtractive patterning technique described in [8] and one type using the spacer defined integration scheme described in [9] with an aspect ratio (AR) 1. We refer to these two types of lines as "metal etch" and "spacer-defined Ru," respectively.…”

Section: A Sample Descriptionmentioning

confidence: 99%

“…Moreover, also the electromigration (EM) performance of Cu interconnects below 30-nm linewidth is severely degraded [2]- [4]. Therefore, alternative metals, such as cobalt [5]- [7] and ruthenium [7]- [9], are being investigated as replacements for Cu. The resistivity of Co and Ru versus Cu has already been studied extensively [10], [11], but studies of their EM performance remain limited [7], [12]- [14].…”

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confidence: 99%

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Electromigration Activation Energies in Alternative Metal Interconnects

Beyne

Pedreira

Oprins

et al. 2019

IEEE Trans. Electron Devices

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The electromigration (EM) activation energy (E A ) of alternative metals, such as Ru and Co, was obtained using low-frequency noise (LFN) measurements. High activation energies were expected, but values of ≈1 eV are found, most likely related to diffusion along with the metaldielectric interface. Wafer-level accelerated EM tests were carried out to compare the LFN E A to the EM E A in the Ru wires. The calculation of the EM E A is found to be strongly dependent on the assumed temperature profile in the wire due to Joule heating (JH). The temperature profile was calculated analytically, assuming the contacts are at ambient temperature. For a void forming in direct proximity of the contact, the EM E A then matches the LFN E A . For a void at average wire temperature (ambient + JH), E A ≈ 2 eV. In addition to demonstrating the application of LFN to study EM in alternative metals, this article also cautions for the impact of JH on the calculation of E A in interconnects.

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“…see that Ru_5 has a much smoother surface as a result of the spacer defined integration scheme that was used for these samples [9].…”

Section: A Sample Descriptionmentioning

confidence: 99%

Section: A Sample Descriptionmentioning

confidence: 99%

Section: A Sample Descriptionmentioning

confidence: 99%

mentioning

confidence: 99%

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Electromigration Activation Energies in Alternative Metal Interconnects

Beyne

Pedreira

Oprins

et al. 2019

IEEE Trans. Electron Devices

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“…We validate our framework through a block-level analysis including the #DRV analysis across suggested design features. The block-level Then, the power is delivered from M3 to Ml and Ml to BPR using stacked vias and SuperVia models [8], respectively.…”

Section: Block-level Routability Analysismentioning

confidence: 99%