High ambipolar mobility in cubic boron arsenide revealed by transient reflectivity microscopy

Yue, Shuai; Tian, Fei; Sui, Xinyu; Mohebinia, Mohammadjavad; Wu, Xin‐Xing; Tong, Tian; Wang, Zhiming; Wu, Bo; Ren, Zhifeng; Bao, Jiming; Liu, Xinfeng

doi:10.1126/science.abn4727

Cited by 36 publications

(25 citation statements)

References 28 publications

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“…Therefore, the real mobility will be only one-third or half compared with those of the predicted value in the DP theory. In a word, it is crucial to control the amount of impurity and defects in the semiconductors for the fabrication of future electronic devices …”

Section: Resultsmentioning

confidence: 99%

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First-Principles Calculations of Monolayer h-BN Nanosheets and Nanoribbons with Ultrahigh Phonon-Limited Hole Mobility for Wide Band Gap P-Channel Transistors

Shan

Luo

et al. 2023

J. Phys. Chem. C

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Hexagonal boron nitride (h-BN) has emerged as one of the most promising candidates for two-dimensional (2D) materials due to its exciting optoelectrical properties and a broad range of applications. In this work, we explore the potential applications of h-BN nanosheets and nanoribbons as wide band gap semiconductors in terms of carrier mobility. Based on the first-principles calculations and deformation potential (DP) theory, the phonon-limited carrier mobility of monolayer h-BN and nanoribbons at room temperature is predicted. We find that the hole mobility of armchair-edge h-BN nanoribbons (ABNNRs) oscillates regularly with the ribbon width N ac in 1–3 nm. The ABNNRs in the N ac = 3p + 1 family have larger hole mobility with the highest value of 1.9 × 104 cm2 V–1 s–1 in the narrow nanoribbons. Molecular orbital analyses reveal that the large hole mobility originates from the delocalization of the occupied orbitals of valence electrons in the transport direction. By studying the effect of ribbon width on mobility, we identify the role of quantum confinement in tuning the transport properties of h-BN nanoribbons. The potential technological application of h-BN nanostructures as a P-channel material in wide band gap 2D field effect transistors (FETs) is discussed.

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Section: Resultsmentioning

confidence: 99%

“…In a word, it is crucial to control the amount of impurity and defects in the semiconductors for the fabrication of future electronic devices. 81 3.2. Size-Dependent Carrier Mobility in 1D h-BN Nanoribbons.…”

Section: Thementioning

confidence: 99%

First-Principles Calculations of Monolayer h-BN Nanosheets and Nanoribbons with Ultrahigh Phonon-Limited Hole Mobility for Wide Band Gap P-Channel Transistors

Shan

Luo

et al. 2023

J. Phys. Chem. C

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“…Very recently, the cubic boron arsenide (cBAs), which is another III-V boride with cubic crystal structure, attracted public attentions. The predicted and measured carrier mobility of cBAs are quite high for both electrons and holes, forms a high ambipolar mobility semiconductor material exceeding those of asymmetrical Si, and the thermal conductivity remains a very high value as cBN [54][55] . The bandgap of cBAs is reported to be a moderate value around 2 eV suitable for doping, the lattice constant is around 4.8 Å not far away from those of Si or GaAs [56][57] , makes it a compatible material for future integrated circuit potentially.…”

Section: Boridementioning

confidence: 98%

“…But for boride, the case are different. III-V boride as a low toxicity material had been investigated for so long a time until now [47][48][49][50][51][52][53][54][55][56][57][58][59][60] . For example, cubic boron nitride (cBN) had been artificially synthesized in 1950's, whereas the natural mineral (Qingsongite) formed in earth mantle was only founded from southern Tibet, China until 2009 50 .…”

Section: Boridementioning

confidence: 99%

The magic of III-Vs

Zhang

et al. 2023

Earth and Space: From Infrared to Terahertz (ESIT 2022)

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III-V compound semiconductors have abundant features for various electronic, optoelectronic and photonic applications, all arise from variform magic combination of group III and group V elements formed binaries, resulting in ever-changing characteristics. In this paper, diversified ternaries, quaternaries and quinaries are presented geometrically based on the binaries of arsenide, phosphide and antimonide, mainly concerned of their bandgap, lattice constant and the lattice match domain on different substrates. The features of nitride and dilute nitride, bismide and dilute bismuth, as well as boride, are also discussed briefly. An overall observation of whole III-Vs may contribute to the comprehensive understanding of their latent capacity and sustainable development, along with many challenges.

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“…[ 11 ] These same phonon band features also yield high intrinsic carrier mobilities by restricting electron‐phonon scattering and make BAs an emerging III‐V semiconductor for high‐performance electronics. [ 12–14 ]…”

Section: Introductionmentioning

confidence: 99%

High‐Pressure Synthesis and Thermal Conductivity of Semimetallic θ‐Tantalum Nitride

Lee

Zhou

Jung

et al. 2023

Adv Funct Materials

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The lattice thermal conductivity (κ ph ) of metals and semimetals is limited by phonon-phonon scattering at high temperatures and by electron-phonon scattering at low temperatures or in some systems with weak phonon-phonon scattering. Following the demonstration of a phonon band engineering approach to achieve an unusually high κ ph in semiconducting cubic-boron arsenide (c-BAs), recent theories have predicted ultrahigh κ ph of the semimetal tantalum nitride in the θ-phase (θ-TaN) with hexagonal tungsten carbide (WC) structure due to the combination of a small electron density of states near the Fermi level and a large phonon band gap, which suppress electron-phonon and three-phonon scattering, respectively. Here, measurements on the thermal and electrical transport properties of polycrystalline θ-TaN converted from the ε phase via high-pressure synthesis are reported. The measured thermal conductivity of the θ-TaN samples shows weak temperature dependence above 200 K and reaches up to 90 Wm −1 K −1 , one order of magnitude higher than values reported for polycrystalline ε-TaN and δ-TaN thin films. These results agree with theoretical calculations that account for phonon scattering by 100 nm-level grains and suggest κ ph increase above the 249 Wm −1 K −1 value predicted for single-crystal WC when the grain size of θ-TaN is increased above 400 nm.

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High ambipolar mobility in cubic boron arsenide revealed by transient reflectivity microscopy

Cited by 36 publications

References 28 publications

First-Principles Calculations of Monolayer h-BN Nanosheets and Nanoribbons with Ultrahigh Phonon-Limited Hole Mobility for Wide Band Gap P-Channel Transistors

First-Principles Calculations of Monolayer h-BN Nanosheets and Nanoribbons with Ultrahigh Phonon-Limited Hole Mobility for Wide Band Gap P-Channel Transistors

The magic of III-Vs

High‐Pressure Synthesis and Thermal Conductivity of Semimetallic θ‐Tantalum Nitride

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