High-accuracy spectral interferometer with multi-Fabry–Perot Etalon for thickness measurement of the silicon wafer

Pang, Shuiling; Zhou, Jinglun; Wu, Heng; Matsumoto, Hirokazu; Takamasu, Kiyoshi

doi:10.1016/j.optcom.2021.127346

Cited by 3 publications

(2 citation statements)

References 31 publications

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“…These effects give rise to applications such as photothermal detection of light, , photoacoustic spectroscopy, − photothermal calorimetry, − and photothermal therapy. − An important recent example is photothermal microscopy, − where subdiffraction IR microscopy has been made possible by detecting photothermal expansion of the IR-absorbing regions in a sample using visible light. Optical cavities are susceptible to thermal effects due to either expansion or refractive index change. , They are essential components in a wide range of applications spanning thin-film interference filters, lasers, and cavity-enhanced spectroscopy. , Therefore, photothermal control of optical cavities is technologically relevant and promising.…”

Section: Introductionmentioning

confidence: 99%

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Short-Pulse Photothermal Modulation of Silicon Optical Cavities Measured by a Continuous Mid-IR Probe

2022

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Photothermal effects, or changes in physical properties of materials in response to heat delivered by light, have a number of applications including the recent success in subdiffraction IR microscopy. Optical cavities, which are at the core of numerous technologies, are also sensitive to thermal effects. Here we bring these ideas together by demonstrating and modeling short-pulse photothermal modulation of a Fabry–Perot cavity formed between the two polished faces of a single silicon wafer. We used near-IR ultrafast pump pulses to transiently heat a silicon cavity while monitoring its transmission with a continuous-wave mid-IR probe. The temperature change induced by the pump pulse changes the refractive index of silicon, which in turn shifts the cavity resonances and the transmission spectrum. We model both the magnitude and the temporal behavior of the photothermal response of the cavity. We envisage applications of photothermal modulation of cavities in the area of optical switches and in photothermal microscopy of thin films.

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Section: Introductionmentioning

confidence: 99%

“…15,16 They are essential components in a wide range of applications spanning thin-film interference filters, 17 lasers, and cavity-enhanced spectroscopy. 18,19 Therefore, photothermal control of optical cavities is technologically relevant and promising.…”

Section: ■ Introductionmentioning

confidence: 99%

Short-Pulse Photothermal Modulation of Silicon Optical Cavities Measured by a Continuous Mid-IR Probe

2022

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Time-to-frequency conversion method for tunable diode laser absorption spectrum

Xiao

Dong

Nie

et al. 2022

Optik

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Surface profile measurement and parameter analysis of silicon wafers in the upright state

Yang,

Han,

Zhang

et al. 2024

Appl. Opt.

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A novel approach, to the best of our knowledge, is presented for assessing silicon wafer surface profiles using an interferometer and vertically rotatable wafer holder. This approach significantly enhances precision and reduces costs, and outperforms traditional techniques in measurement consistency and accuracy. It effectively reduces sample distortion and positional shifts owing to the removal and reinstallation of the wafers. Using this method, a global backsurface-referenced ideal range of 0.385 µm, warp of 0.193 µm, and other parameters were obtained, demonstrating its practicality in efficiently capturing key surface profile metrics for silicon wafers. This innovation promises substantial improvements in high-volume wafer surface profile testing, overcoming prevalent technological challenges in this industry.

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High-accuracy spectral interferometer with multi-Fabry–Perot Etalon for thickness measurement of the silicon wafer

Cited by 3 publications

References 31 publications

Short-Pulse Photothermal Modulation of Silicon Optical Cavities Measured by a Continuous Mid-IR Probe

Short-Pulse Photothermal Modulation of Silicon Optical Cavities Measured by a Continuous Mid-IR Probe

Time-to-frequency conversion method for tunable diode laser absorption spectrum

Surface profile measurement and parameter analysis of silicon wafers in the upright state

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