High accuracy determination of the thermal properties of supported 2D materials

Abstract

We present a novel approach for the simultaneous determination of the thermal conductivity κ and the total interface conductance g of supported 2D materials by the enhanced opto-thermal method. We harness the property of the Gaussian laser beam that acts as a heat source, whose size can easily and precisely be controlled. The experimental data for multi-layer graphene and MoS2 flakes are supplemented using numerical simulations of the heat distribution in the Si/SiO2/2D material system. The procedure of κ and g extraction is tested in a statistical approach, demonstrating the high accuracy and repeatability of our method.

Temperature‐induced phonon behavior in titanium disulfide (TiS2) nanosheets

“…In conclusion, we have performed the temperature‐dependent Raman studies of mechanically exfoliated titanium disulfide thin films supported on SiO 2 /Si substrate and determined their phonon properties in temperature range between 80 and 450 K. The first order temperature coefficients were calculated and are χ = ‐0.0283, ‐0.0134, and +0.0592 cm ‐1 /K for E g , A 1g , and Sh modes, respectively. These results can be also useful for further analysis of phonon properties and deeper understanding of heat dissipation of supported TiS 2 films, using, for example, optothermal method …”

“…These results can be also useful for further analysis of phonon properties and deeper understanding of heat dissipation of supported TiS 2 films, using, for example, optothermal method. [47]…”

Enhancement of graphene thermoelectric performance through defect engineering

“…In our study, the thermal conductivity of the suspended graphene film with D/G = 2.42 (highest defect density) was found to be just 5.6% of that of the as-prepared graphene (D/G = 0.04). Note that the thermal conductivity of graphene supported on the SiO 2 substrate was also measured for comparison according to the recent publications [24,31]. Details of the measurement and results are shown in the Supporting Information.…”

Thermal Transport in 2D Semiconductors—Considerations for Device Applications

“…Besides TDTR and different 3ω techniques, which are preferred for bulk interface measurement, noncontact Raman thermometry is an attractive technique to characterize atomic interface thermal transport, especially for 2D layered materials. The Raman‐sensitive peaks of the measured sample would serve as a temperature thermometer while the incident heat source is from the heating by either electrical or optical means. A sketch of a Raman laser heating setup is shown in Figure a, where the interface thermal transport across monolayer MoS 2 and SiO 2 /AlN substrate is measured .…”