Abstract:Semiconducting organic–inorganic
nanocomposites comprising
conjugated polymers (CPs) and semiconducting nanocrystals (NCs) represent
an important class of functional materials. The ability to organize
CPs and NCs into self-assembled nanostructures in close proximity
may enable efficient charge or energy transfer between them for use
in flexible electronics, light-emitting displays, and photovoltaics.
Herein we report the crafting of one-dimensional (1D) functional nanocomposites
composed of all-conjugated dibl… Show more
“…The d 010 of P3HT and P3BS are 3.8 and 4.2 Å, according to the scattering vectors ( q x , y ) of 16.7 and 14.9 nm –1 , respectively (Figures S7c and S8c; Table ). The diffraction peaks with the d 100 of 16.3 and 9.9 Å can be assumed as P3HT form I crystal and P3BS form II crystal, respectively. As the diffraction peak intensity is approximately proportional to the materials crystallinity, the stronger intensity of (100) diffraction of P3HT indicates it has a higher crystallinity than P3BS form II (Figures S7a and S8a).…”
Section: Resultsmentioning
confidence: 99%
“…P3HT- b -P3BS BCPs with various P3HT/P3BS block ratios were synthesized by Grignard metathesis (GRIM) polymerization based on our previous report. − As a representative, the procedure for the synthesis of P3HT- b -P3BS with a feed molar ratio of 60:60 was given as follows: 2-bromo-5-iodo-3-hexylthiophene (0.895 g, 2.4 mmol) was dissolved in THF (60 mL) in a three-neck flask and stirred under N 2 . After cooling the solution to 0 °C, i -PrMgCl in THF (1.2 mL, 2.4 mmol) was added via a syringe, and the mixture was stirred for 30 min.…”
Despite
significant advances in double-crystalline coil–coil
block copolymers (BCPs), investigations into double-crystalline all-conjugated
rod–rod BCPs have been comparatively fewer and are limited
in scope. Moreover, the ability to control the crystalline structures
of all-conjugated BCPs may endow the materials and devices with enhanced
optoelectronic properties over the two respective constituents. Herein,
we report the synthesis of a series of poly(3-hexylthiophene)-block-poly(3-butylselenophene) (P3HT-b-P3BS)
BCPs with tunable block ratios and investigate the effects of block
ratio and thermal annealing process on their crystallization and microphase-separated
structures. These rod–rod BCPs exhibit a sole P3HT crystallization
(P3HT/P3BS = 63:37) or individual P3HT and P3BS crystallization (P3HT/P3BS
= 55:45 and 42:58) in as-cast thin films, influenced by the block
ratio of P3HT/P3BS. Interestingly, upon 200 °C-annealing (i.e.,
annealed at the temperature below the melting points of P3HT and P3BS
form I blocks), P3HT-b-P3BS (P3HT/P3BS = 63:37) remains
the sole P3HT crystallization, while P3HT-b-P3BS
(P3HT/P3BS = 55:45 and 42:58) transforms from two individual P3HT
and P3BS crystal domains into cocrystals, accompanied by the phase
transition of P3BS block from form II to I. Remarkably, after a higher
thermal annealing at 230 °C (i.e., close to the melting point
of P3HT block yet below the melting point of P3BS form I block), the
cocrystalline structures originally existing in P3HT-b-P3BS (P3HT/P3BS = 55:45 and 42:58) at the 200 °C-annealing
process do not form, and they reverse back to individual P3HT and
P3BS form I crystals. Finally, the relationship between various structures
of P3HT-b-P3BS and the resulting charge mobilities
is clarified. This study provides an insight into the interplay between
microphase separation of P3HT-b-P3BS and crystallization
of both P3HT and P3BS blocks tailored by the block ratio and thermal
annealing temperature and correlates their different structures with
the charge transport properties.
“…The d 010 of P3HT and P3BS are 3.8 and 4.2 Å, according to the scattering vectors ( q x , y ) of 16.7 and 14.9 nm –1 , respectively (Figures S7c and S8c; Table ). The diffraction peaks with the d 100 of 16.3 and 9.9 Å can be assumed as P3HT form I crystal and P3BS form II crystal, respectively. As the diffraction peak intensity is approximately proportional to the materials crystallinity, the stronger intensity of (100) diffraction of P3HT indicates it has a higher crystallinity than P3BS form II (Figures S7a and S8a).…”
Section: Resultsmentioning
confidence: 99%
“…P3HT- b -P3BS BCPs with various P3HT/P3BS block ratios were synthesized by Grignard metathesis (GRIM) polymerization based on our previous report. − As a representative, the procedure for the synthesis of P3HT- b -P3BS with a feed molar ratio of 60:60 was given as follows: 2-bromo-5-iodo-3-hexylthiophene (0.895 g, 2.4 mmol) was dissolved in THF (60 mL) in a three-neck flask and stirred under N 2 . After cooling the solution to 0 °C, i -PrMgCl in THF (1.2 mL, 2.4 mmol) was added via a syringe, and the mixture was stirred for 30 min.…”
Despite
significant advances in double-crystalline coil–coil
block copolymers (BCPs), investigations into double-crystalline all-conjugated
rod–rod BCPs have been comparatively fewer and are limited
in scope. Moreover, the ability to control the crystalline structures
of all-conjugated BCPs may endow the materials and devices with enhanced
optoelectronic properties over the two respective constituents. Herein,
we report the synthesis of a series of poly(3-hexylthiophene)-block-poly(3-butylselenophene) (P3HT-b-P3BS)
BCPs with tunable block ratios and investigate the effects of block
ratio and thermal annealing process on their crystallization and microphase-separated
structures. These rod–rod BCPs exhibit a sole P3HT crystallization
(P3HT/P3BS = 63:37) or individual P3HT and P3BS crystallization (P3HT/P3BS
= 55:45 and 42:58) in as-cast thin films, influenced by the block
ratio of P3HT/P3BS. Interestingly, upon 200 °C-annealing (i.e.,
annealed at the temperature below the melting points of P3HT and P3BS
form I blocks), P3HT-b-P3BS (P3HT/P3BS = 63:37) remains
the sole P3HT crystallization, while P3HT-b-P3BS
(P3HT/P3BS = 55:45 and 42:58) transforms from two individual P3HT
and P3BS crystal domains into cocrystals, accompanied by the phase
transition of P3BS block from form II to I. Remarkably, after a higher
thermal annealing at 230 °C (i.e., close to the melting point
of P3HT block yet below the melting point of P3BS form I block), the
cocrystalline structures originally existing in P3HT-b-P3BS (P3HT/P3BS = 55:45 and 42:58) at the 200 °C-annealing
process do not form, and they reverse back to individual P3HT and
P3BS form I crystals. Finally, the relationship between various structures
of P3HT-b-P3BS and the resulting charge mobilities
is clarified. This study provides an insight into the interplay between
microphase separation of P3HT-b-P3BS and crystallization
of both P3HT and P3BS blocks tailored by the block ratio and thermal
annealing temperature and correlates their different structures with
the charge transport properties.
“…due to the spatial arrangement of nanomaterials over multiple length scales [1] . In this context, several solution‐based techniques, such as template‐directed assembly, [2] bottom‐up assembly, [3, 4] and inkjet printing, [5] have been developed to yield hierarchically ordered assemblies. Notably, these approaches often involve the use of expensive equipment or require a complex multistep process for template preparation or assembly formation.…”
Rapid and deliberate patterning of nanomaterials over a large area is desirable for device manufacturing. We report a method for meniscus‐assisted self‐assembly (MASA)‐enabled rapid positioning of hierarchically assembled dots and stripes composed of luminescent conjugated polymer over two length scales. Periodically arranged conjugated poly(9,9‐dioctylfluorene) (PFO) polymers, yield dots, punch‐holes and stripes at microscopic scale via MASA. Concurrent self‐assembly of PFOs into two‐dimensional lenticular crystals within each dot, punch‐hole and stripe is realized at nanoscopic scale. Hierarchical assembly is achieved by constraining the evaporation of the PFOs solution in two approximately parallel plates via a MASA process. The three‐phase contact line (TCL) of the liquid meniscus of the PFOs was printed using the upper plate, yielding an array of curved stripes. Rapid creation of hierarchical assemblies via MASA opens up possibilities for large‐scale organization of a wide range of soft matters and nanomaterials.
“…Researchers have developed new functional nanomaterials to replace conventional scaling methods, which offer inexpensive solutions for microelectronic devices. Solution‐based self‐assembly involved formation methods at room temperature are one of the bottom–up synthetic strategies and have attracted the most attention thanks to their simplicity and ease of applicability in large‐scale production beyond the limit of conventional semiconductors, as they can produce nanostructures such as anisotropic 1D morphologies of organic polymers, [ 1,2 ] polymer‐small molecule hybrids, [ 3–5 ] copolymers, [ 6–8 ] and organic–inorganic hybrids, [ 9–11 ] with high crystallinity, monodispersity, and unique electronic and optical properties.…”
Herein, it is reported the influence of solution processing and treatments, such as adding marginal solvent, ultrasonication, and UV treatment, on the resulting perovskite (CsPbBr3) quantum dot (QD)/poly(3‐hexylthiophene) (P3HT) composite nanofibril films (CNFs) to improve the charge dissociation and photonic synaptic performance. A photonic synaptic transistor with CNFs can perform fundamental functions, including short‐term plasticity, long‐term plasticity, spike‐number‐dependent, and spike‐time‐dependent plasticity, to mimic sensing, computing, and memory functions. Notably, a synaptic device with CNFs presents an ultralow energy consumption of 0.18 fJ and zero‐gate operation. The superior performance of synaptic devices with CNFs can be attributed to two factors: (i) homogeneous axial distribution of the QDs and (ii) the formation of P3HT nanofibrils and co‐aggregates. Therefore, enhanced interfacial charge transfer between QDs and P3HT, ensuring decent carrier transport capability, is achieved. Collectively, the composite artificial synapse successfully provides an effective guide that offers a new perspective for the fabrication of one‐dimensional self‐assembled nanostructure‐based artificial synapses emulating human‐like memory, neuromorphic computing, and artificial intelligent systems.
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