2021
DOI: 10.1021/acsami.1c00958
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Hierarchical Nanoporous BiVO4 Photoanodes with High Charge Separation and Transport Efficiency for Water Oxidation

Abstract: To fabricate high efficiency photoanodes for water oxidation, it is highly required to engineer their nanoporous architecture and interface to improve the charge separation and transport efficiency. By focusing on this aspect, we developed hierarchical nanoporous BiVO 4 (BV) from solution processed twodimensional BiOI (BI) crystals. The orientation of the BI crystals was controlled by changing the solvent volume ratios of ethylene glycol (EG) to ethanol (ET), which resulted in different hierarchical and planar… Show more

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Cited by 29 publications
(24 citation statements)
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“…In order to overcome the limits of traditional photoelectrochemical (PEC) materials, numerous semiconductors have been studied as an alternative that has a small band gap, good charge separation efficiency, and a long carrier lifetime. Fe 2 O 3 , WO 3 , and BiVO 4 (BVO) can represent photoanodes with the high theoretical STH conversion efficiencies of 15.5, 5.8, and 9.2%, respectively . Although WO 3 is earth-abundant, a good light absorber, and stable in an aqueous solution, it has a relatively low STH conversion efficiency. , BVO has good STH conversion efficiency and low production cost, but it has poor surface charge-transfer ability. Fe 2 O 3 is stable in water and has good STH conversion efficiency. , However, it requires a high overpotential for water oxidation, poor transport ability of majority carriers, short diffusion length of minority carriers, and low absorption coefficient . To achieve the theoretical maximum conversion efficiency, a design strategy that goes beyond the limits of these PEC materials is important.…”
Section: Introductionmentioning
confidence: 99%
“…In order to overcome the limits of traditional photoelectrochemical (PEC) materials, numerous semiconductors have been studied as an alternative that has a small band gap, good charge separation efficiency, and a long carrier lifetime. Fe 2 O 3 , WO 3 , and BiVO 4 (BVO) can represent photoanodes with the high theoretical STH conversion efficiencies of 15.5, 5.8, and 9.2%, respectively . Although WO 3 is earth-abundant, a good light absorber, and stable in an aqueous solution, it has a relatively low STH conversion efficiency. , BVO has good STH conversion efficiency and low production cost, but it has poor surface charge-transfer ability. Fe 2 O 3 is stable in water and has good STH conversion efficiency. , However, it requires a high overpotential for water oxidation, poor transport ability of majority carriers, short diffusion length of minority carriers, and low absorption coefficient . To achieve the theoretical maximum conversion efficiency, a design strategy that goes beyond the limits of these PEC materials is important.…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, the relative ECSAs of the WBV films with different particle sizes (Figure a–e) were calculated from the electrochemical double layer capacitance ( C dl ) by measuring CV under dark conditions (Figure S8). It is noted that C dl is linearly proportional to the ECSA . The linear slope values of WBV photoanodes with different BiVO 4 particle sizes were compared to observe the surface characteristics (Figure f).…”
Section: Resultsmentioning
confidence: 99%
“…It was found that the WBV photoanode with the smallest BiVO 4 particle size showed a larger slope value than the other WBV photoanodes, suggesting the maximum ECSA (Figure f). Thus, a WBV photoanode with a smaller BiVO 4 particle size possessed larger interfacial areas and porosity that allowed access to more electrolyte at the electrode surface, resulting in enhanced PEC properties . To achieve the heterojunction effect of the WBV film, it is necessary to load an optimum amount of BiVO 4 on WO 3 nanosheets (Figure S4d).…”
Section: Resultsmentioning
confidence: 99%
“…Currently, oxide semiconductors have received extensive attention due to their intrinsic characteristics of adjustable chemical composition, controllable band gaps, stable performance, etc. [6][7][8][9][10] The studied materials in the PEC-WS eld have expanded from wide bandgap semiconductors (e.g., TiO 2 (ref. 11) and ZnO 12 ) to narrow bandgap semiconductors (e.g., BiVO 4 (ref.…”
Section: Introductionmentioning
confidence: 99%