HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology

Investigation of 1/f Noise Mechanisms in Midwave Infrared HgCdTe Gated Photodiodes

“…The devices fabricated in this study are based on type conversion using a plasma process, as reported previously. 2,3 This method has the advantage of being much simpler than traditional ion implantation and ion milling methods. This paper will report on the dark current characteristics of these gated MWIR HgCdTe photodiodes, as well as the 1/f noise that these photodiodes produce.…”

Effect of High-Density Plasma Process Parameters on Carrier Transport Properties in p-to-n Type Converted Hg0.7Cd0.3Te Layer

“…1 A novel fabrication process based on plasma-induced type conversion using a parallel-plate reactive ion etching (RIE) tool has previously been demonstrated to also be capable of producing high-performance Hg 0.7 Cd 0.3 Te homojunction photodiodes, with bakestable R 0 A values greater than 10 7 WÁcm 2 at 80 K. 2,3 Typical photodiode fabrication processes based on either ion implantation or RIE-induced junction formation are compared in Fig. 1.…”

“…1. 2 Advantages of the RIE-based process include not requiring a hightemperature anneal to repair damage and activate dopants, and the relatively low impinging ion energy being below that which necessitates reapplication of the passivation layer. This means that the photodiode fabrication process based on RIE-induced junction formation is truly planar and does not expose the junction surface to atmosphere at any stage.…”

Correlation of laser-beam-induced current with current-voltage measurements in HgCdTe photodiodes

“…9 Because the pin-out connections in the LBIC system were limited, only six of the devices were chosen for measurement and analysis. The starting wafer was a p-type vacancy-doped sample grown by Fermionics Corporation (Simi Valley, CA) by liquid-phase epitaxy.…”

“…9 The wafer was a p-type vacancy-doped sample grown by Fermionics Corporation by liquid phase epitaxy. The p-type doping was N A ϭ 7.1 ϫ 10 15 cm Ϫ3 with hole mobility of 695 cm 2 V Ϫ1 s Ϫ1 at 78 K, and the epilayer thickness immediately prior to fabrication was measured by FTIR spectroscopy to be 19 µm.…”