2016
DOI: 10.1007/s11664-016-4516-3
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HgCdTe Detectors for Space and Science Imaging: General Issues and Latest Achievements

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Cited by 53 publications
(15 citation statements)
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“…碲镉汞(Hg 1−x Cd x Te)是一种带隙可调的三元化合 物半导体材料, 通过调节x的值, 也就是调节Cd的组分, 能覆盖短波红外到甚长波红外波段(0.7-30 µm) [1,2] . 基 于碲镉汞材料的大规模焦平面器件, 已经广泛应用于 空间遥感, 在气象探测、航空航天应用以及军事侦测 领域发挥着重要作用 [3][4][5] . 当碲镉汞材料从短波、中波 拓展至长波红外波段时, 面临着一些新的问题.…”
Section: 引言unclassified
“…碲镉汞(Hg 1−x Cd x Te)是一种带隙可调的三元化合 物半导体材料, 通过调节x的值, 也就是调节Cd的组分, 能覆盖短波红外到甚长波红外波段(0.7-30 µm) [1,2] . 基 于碲镉汞材料的大规模焦平面器件, 已经广泛应用于 空间遥感, 在气象探测、航空航天应用以及军事侦测 领域发挥着重要作用 [3][4][5] . 当碲镉汞材料从短波、中波 拓展至长波红外波段时, 面临着一些新的问题.…”
Section: 引言unclassified
“…However, currently, neither of the available detector technologies in the 1550 nm region is attractive for use in a CubeSat: Both Indium-Gallium-Arsenide (IGA) APDs as well as detectors based on Mercury-Cadmium-Telluride (MCT) technology require cooling to very low temperatures (< -80 °C). In addition, IGA APDs have a rather low photon detection efficiency (PDE) < 25%, whereas MCT SPDs are still in development and appear to be hampered by large DCR [35,36]. At the current state of technology, only Silicon-based Avalanche Photo Diodes (Si-APDs) in the 800 nm range are able to combine a sufficiently high PDE and low jitter with a low DCR.…”
Section: Single Photon Detectorsmentioning
confidence: 99%
“…However, for high flux applications, e.g., earth observation with relative large number of photons, T2SL detectors offer excellent properties. A comparison with state-of-the-art HgCdTe detectors [10][11] , specially designed for astronomical applications, where low dark currents are required, is shown in Fig. 6.…”
Section: Dark Current Measurementsmentioning
confidence: 99%
“…Dark current density of T2SL structures as a function of the inverse temperature and inverse cut-off wavelength in comparison with published HgCdTe data[10][11] .…”
mentioning
confidence: 95%