HfS<sub>2</sub> thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

Cao, Yuanyuan; Zhu, Sha; Bachmann, Julien

doi:10.1039/d1dt01232k

Cited by 2 publications

(2 citation statements)

References 40 publications

(43 reference statements)

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“…This limits further conceptual developments and optimization. In earlier work, mainly ex situ approaches were applied to study the growth mechanisms, such as the atomic force microscopy, ellipsometry, and X-ray reflectometry (XRR). ,, While in gALD, in situ methods contributed particularly to the mechanistic understanding, ,− these methods are rarely found for sALD. In this context, Stickney and co-workers studied in situ the growth of different nanofilms deposited by an E-ALD process using electrochemical scanning tunneling microscopy (EC-STM). , …”

Section: Introductionmentioning

confidence: 99%

“…The precursors have to be highly reactive yet robust enough so that they do not decompose thermally. Further, the majority of ALD processes in the gas phase require vacuum conditions, which involve costly equipment. , These limitations can be overcome by transferring the ALD approach into the liquid phase, − the so-called solution ALD (sALD) or liquid ALD (LALD) process. The principle remains the same, namely, the ability to have self-limited growth behavior, even though the environment is different.…”

Section: Introductionmentioning

confidence: 99%

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Mechanistic Insight into Solution-Based Atomic Layer Deposition of CuSCN Provided by In Situ and Ex Situ Methods

Hilpert

Liao

Franz

et al. 2023

ACS Appl. Mater. Interfaces

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Solution-based atomic layer deposition (sALD) processes enable the preparation of thin films on nanostructured surfaces while controlling the film thickness down to a monolayer and preserving the homogeneity of the film. In sALD, a similar operation principle as in gasphase ALD is used, however, with a broader range of accessible materials and without requiring expensive vacuum equipment. In this work, a sALD process was developed to prepare CuSCN on a Si substrate using the precursors CuOAc and LiSCN. The film growth was studied by ex situ atomic force microscopy (AFM), analyzed by a neural network (NN) approach, ellipsometry, and a newly developed in situ infrared (IR) spectroscopy experiment in combination with density functional theory (DFT). In the self-limiting sALD process, CuSCN grows on top of an initially formed two-dimensional (2D) layer as three-dimensional spherical nanoparticles with an average size of ∼25 nm and a narrow particle size distribution. With increasing cycle number, the particle density increases and larger particles form via Ostwald ripening and coalescence. The film grows preferentially in the β-CuSCN phase. Additionally, a small fraction of the α-CuSCN phase and defect sites form.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Mechanistic Insight into Solution-Based Atomic Layer Deposition of CuSCN Provided by In Situ and Ex Situ Methods

Hilpert

Liao

Franz

et al. 2023

ACS Appl. Mater. Interfaces

Self Cite

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Nucleation Behavior of SnS₂ on Thiol Functionalized SAMs During Solution‐Based Atomic Layer Deposition

Götz,

Prihoda,

Shen

et al. 2024

Adv Materials Inter

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Solution‐based atomic layer deposition (sALD) is an emerging technique that transfers the principle of traditional atomic layer deposition (ALD) from the gas phase into a wet chemical environment. This new preparation technique has new and unique properties and requirements. A large number of new surfaces and reactants are available to produce active 2D materials.In this work a reproducible procedure to coat silicon wafers with a densely packed monolayer of (3‐Mercaptopropyl)trimethoxysilane (MPTMS) molecules is presented. These highly functionalized surfaces can be used to seed the nucleation of SnS2 in a solution‐based ALD procedure. A coating routine for the production of SnS2 is adapted from ALD to sALD and insight into the nucleation behavior of the reactands is given. X‐ray reflectometry (XRR) is used to resolve the nucleation process of SnS2 on an MPTMS self assembled monolayer (SAM) during the first three cycles of an sALD procedure. The comparison of ex situ XRR, in situ XRR, grazing incidence wide‐angle X‐ray scattering (GIWAXS), atomic force microscopy (AFM), energy dispersive X‐ray spectroscopy (EDX) measurements, and density functional theory (DFT) calculations find that SnS2 first forms a closed layer and then continues to grow in islands on thiol functionalized silane SAMs. Subsequent coating cycles will continue the growth of the islands laterally and in height.

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HfS₂ thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

Abstract: The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

Cited by 2 publications

References 40 publications

Mechanistic Insight into Solution-Based Atomic Layer Deposition of CuSCN Provided by In Situ and Ex Situ Methods

Mechanistic Insight into Solution-Based Atomic Layer Deposition of CuSCN Provided by In Situ and Ex Situ Methods

Nucleation Behavior of SnS₂ on Thiol Functionalized SAMs During Solution‐Based Atomic Layer Deposition

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HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

Abstract: The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

Cited by 2 publications

References 40 publications

Mechanistic Insight into Solution-Based Atomic Layer Deposition of CuSCN Provided by In Situ and Ex Situ Methods

Mechanistic Insight into Solution-Based Atomic Layer Deposition of CuSCN Provided by In Situ and Ex Situ Methods

Nucleation Behavior of SnS2 on Thiol Functionalized SAMs During Solution‐Based Atomic Layer Deposition

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HfS₂ thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

Nucleation Behavior of SnS₂ on Thiol Functionalized SAMs During Solution‐Based Atomic Layer Deposition