HfO<sub>x</sub>-Based RRAM Device With Sandwich-Like Electrode for Thermal Budget Requirement

Sun, Jianxun; Tan, Juan Boon; Chen, T. P.

doi:10.1109/ted.2020.3014846

Cited by 16 publications

(5 citation statements)

References 25 publications

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“…An aluminum capping layer was deposited on Ti and Ta with a thickness of 50 nm to prevent unnecessary reactions between the TE metal and oxygen under ambient conditions. Each memristor with different TE metals was subjected to PMA in a furnace for 1 h at 300, 400, and 500 °C. − Henceforth, for simplicity, an RRAM-based memristor is referred to as a “memristor.”…”

Section: Methodsmentioning

confidence: 99%

Analysis of the Thermal Degradation Effect on a HfO₂-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System

Park

Kim

et al. 2021

ACS Appl. Electron. Mater.

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The thermal budget problem needs to be considered for a neuromorphic system based on a memristor to be compatible with silicon-based devices. The thermal degradation caused by postmetal annealing (PMA) was investigated for HfO 2based memristor (HM) devices at temperatures above 300 °C to ensure the thermal stability of memristor devices and analyze the effect of thermal degradation on the neuromorphic system. As thermal degradation is caused by oxygen atom movement between the interlayer and the top electrode (TE), the thermal stability of the memristor can be improved by adjusting the oxygen affinity of the TE metal. By changing the TE metal from titanium (Ti) to tantalum (Ta), the resistance of the high-resistance state and resistance variability after PMA at 400 °C for 1 h decreased from 516 to 10% and from 21 to 4%, respectively. In addition, pattern recognition simulation was performed using an artificial neural network consisting of a memristor device. Although the pattern recognition simulation with the Ti TE-HM showed a pattern recognition accuracy of 82.3% after PMA owing to thermal degradation, the simulation with the Ta TE-HM showed a high accuracy of 51.7% even after PMA. This experimental approach can facilitate the development of neuromorphic systems with good thermal stability up to 400 °C.

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Section: Methodsmentioning

confidence: 99%

Analysis of the Thermal Degradation Effect on a HfO₂-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System

Park

Kim

et al. 2021

ACS Appl. Electron. Mater.

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Section: Ti Thickness-dependent Rsmentioning

confidence: 77%

“…Furthermore, the VSET, HRS, and LRS of the device with 15 nm Ti show the narrowest distribution, and the DDV of the VSET, HRS, and LRS is 12.85%, 17.07%, and 17.16%, respectively. The above results demonstrate that the device with a 15 nm Ti shows the best RS uniformity, which may originate from the initial high oxygen vacancy concentration, reduced forming voltage, and TiOx formation [26,31]. Since the HfO2-based RRAM device with a 15 nm Ti buffer layer shows the best uniformity, the RS behaviors of the present devices are systematically investigated, as displayed in Figure 4.…”

Section: Ti Thickness-dependent Rsmentioning

confidence: 87%

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Lee

et al. 2023

Electronics

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HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

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“…The electrode material of the memristor must not only have the function of conducting current but must also participate in the resistance change reaction [18][19][20]. The electronic barrier at the electrode/dielectric interface is formed by the presence of high concentrations of interface states [21].…”

Section: Flexible Electrode Materialsmentioning

confidence: 99%

“…With an excellent dielectric constant (~25) and Young's modulus (~74.3 GPa) [20,21], HfO 2 exhibits satisfactory switching performance and will provide potential applications in flexible electronic devices [38]. Zhang et al [38] prepared an ITO/HfO 2 /TiN/polyimide access memory (memristor) device that used HfO 2 as a dielectric layer.…”

Section: Metal Oxide Flexible Memristormentioning

confidence: 99%

Research Progress of Biomimetic Memristor Flexible Synapse

et al. 2021

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With the development of the Internet of things, artificial intelligence, and wearable devices, massive amounts of data are generated and need to be processed. High standards are required to store and analyze this information. In the face of the explosive growth of information, the memory used in data storage and processing faces great challenges. Among many types of memories, memristors have received extensive attentions due to their low energy consumption, strong tolerance, simple structure, and strong miniaturization. However, they still face many problems, especially in the application of artificial bionic synapses, which call for higher requirements in the mechanical properties of the device. The progress of integrated circuit and micro-processing manufacturing technology has greatly promoted development of the flexible memristor. The use of a flexible memristor to simulate nerve synapses will provide new methods for neural network computing and bionic sensing systems. In this paper, the materials and structure of the flexible memristor are summarized and discussed, and the latest configuration and new materials are described. In addition, this paper will focus on its application in artificial bionic synapses and discuss the challenges and development direction of flexible memristors from this perspective.

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HfO_x-Based RRAM Device With Sandwich-Like Electrode for Thermal Budget Requirement

Cited by 16 publications

References 25 publications

Analysis of the Thermal Degradation Effect on a HfO₂-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System

Analysis of the Thermal Degradation Effect on a HfO₂-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Research Progress of Biomimetic Memristor Flexible Synapse

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HfOx-Based RRAM Device With Sandwich-Like Electrode for Thermal Budget Requirement

Cited by 16 publications

References 25 publications

Analysis of the Thermal Degradation Effect on a HfO2-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System

Analysis of the Thermal Degradation Effect on a HfO2-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Research Progress of Biomimetic Memristor Flexible Synapse

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Product

Resources

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HfO_x-Based RRAM Device With Sandwich-Like Electrode for Thermal Budget Requirement

Analysis of the Thermal Degradation Effect on a HfO₂-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System

Analysis of the Thermal Degradation Effect on a HfO₂-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System