Abstract:High-K HfO 2 -TiO 2 ultra-thin films with sub-nanometer laminate HfO 2 /TiO 2 stacks were deposited on p-type (100) silicon wafer using magnetron sputtering at 300 • C. The as-deposited films are amorphous which could be sustained up to 900 • C in air. The off-stoichiometric films show further improved thermal stability due to obstacled crystallization process. It is revealed that Hf-rich films trends to form thicker interfacial layer due to the stability of HfO 2 , whereas Ti-rich films usually demonstrate hi… Show more
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