Hexagonal Silicon Realized

Hauge, Håkon Ikaros T.; Verheijen, Marcel A.; Conesa‐Boj, Sonia; Etzelstorfer, Tanja; Watzinger, Marc; Kriegner, Dominik; Zardo, Ilaria; Fasolato, Claudia; Capitani, Francesco; Postorino, P.; Kölling, Sebastian; Li, Ang; Assali, Simone; Stangl, J.; Bakkers, Erik P. A. M.

doi:10.1021/acs.nanolett.5b01939

Cited by 155 publications

(176 citation statements)

References 27 publications

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“…The lattice constants a=4.06 Å and c=6.6 Å, extracted from Figure 6(b), agree very well with those reported by Fontcuberta i Morral et al [27] in Si NWs grown using standard chemical vapor deposition at growth temperatures above 500 °C. Those values, however, are different from those reported for 2H Si NW shells where the hexagonal structure was epitaxially imposed by the GaP core [28,29]. Studies carried out elsewhere [30][31][32] show that "anomalous" diffraction patterns could arise from defects of the cubic structure, giving rise to apparent hexagonal patterns due to superposition of different …”

Section: Study Of the Si Nws Structurementioning

confidence: 73%

Direct growth of Si nanowires on flexible organic substrates

et al. 2016

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The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. Abstract A key characteristic of semiconductor nanowires (NWs) is that they grow on any substrate that stands up the growth conditions, paving the way for their use in flexible electronics. We report on the direct growth of crystalline silicon nanowires on polyimide substrates. The Si NWs are grown by plasma-enhanced chemical vapor deposition, which allows the growth to proceed at temperatures low enough to be compatible with plastic substrates (350 °C), where gold or indium are used as growth seeds. In is particularly interesting as the seed not only because it leads to a better NW crystal quality but also because it overcomes a core problem induced by the use of Au in silicon processing, i.e. Au creates deep carrier traps when incorporated in the nanowires.

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Section: Study Of the Si Nws Structurementioning

confidence: 73%

Direct growth of Si nanowires on flexible organic substrates

et al. 2016

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“…3 Here, we employ crystal structure transfer, in which we use wurtzite GaP as a template to epitaxially grow SiGe compounds with the hexagonal crystal structure (see figure 1). 4 We show that with this method we can grow defect free hexagonal SiGe shells and branches with tunable Ge concentration. The structural and optical properties of these new crystal phases will be discussed.…”

mentioning

confidence: 86%

New opportunities with nanowires

Bakkers¹,

Hauge²,

Li³

et al. 2016

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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“…While such lamellae should not be considered a 2H hexagonal phase, there is sufficient evidence that well‐ordered … ( A b )( B a )… stacking of tetrahedral planes (Figs and ) occurs at scales up to, at least, tens of nanometers for C (e.g. see Chen et al , ; Daulton et al , ; Lifshitz et al , ; Kulnitskiy et al , ; Kraus et al , ), Si (Dahmen et al , ; Cerva, ; Algra et al , ; Hauge et al , ), Ge (Xiao and Pirouz, ; Vincent et al , ) and SiC (Daulton et al , ). Therefore, lonsdaleite, as well as other 2H hexagonal‐diamond isostructural phases, do exist on at least this spatial scale.…”

Section: The Nanodiamond Evidencementioning

confidence: 99%

Comprehensive analysis of nanodiamond evidence relating to the Younger Dryas Impact Hypothesis

Daulton

Amari

Scott

et al. 2016

J Quaternary Science

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During the end of the last glacial period in the Northern Hemisphere near 12.9k cal a BP, deglacial warming of the Bølling–Ållerod interstadial ceased abruptly and the climate returned to glacial conditions for an interval of about 1300 years known as the Younger Dryas stadial. The Younger Dryas Impact Hypothesis proposes that the onset of the Younger Dryas climate reversal, Pleistocene megafaunal extinctions and disappearance of the Clovis paleoindian lithic technology were coeval and caused by continent‐wide catastrophic effects of impact/bolide events in North America. While there are no known impact structures dated to the Younger Dryas onset, physical evidence of the impact/bolide events is argued to be present in sediments spanning several continents at stratigraphic levels inferred to date to the Bølling‐Ållerod/Younger Dryas boundary (YDB). Reports of nanometer to submicron‐sized diamonds in YDB sediments, in particular the rare 2H hexagonal polytype of diamond, lonsdaleite, have been presented as strong evidence for shock processing of crustal materials. We review the available data on diamonds in sediments and provide new data. We find no evidence for lonsdaleite in YDB sediments and find no evidence of a spike in nanodiamond concentration at the YDB layer to support the impact hypothesis.

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Hexagonal Silicon Realized

Cited by 155 publications

References 27 publications

Direct growth of Si nanowires on flexible organic substrates

Direct growth of Si nanowires on flexible organic substrates

New opportunities with nanowires

Comprehensive analysis of nanodiamond evidence relating to the Younger Dryas Impact Hypothesis

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