Hexagonal Boron Nitride: Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ångström‐Thin Passivation Layer (Adv. Electron. Mater. 6/2021)

Abstract

Ångström-thin hexagonal boron nitride (hBN) is a highly promising barrier/ liner dielectric material for passivating electrical interconnects in ultra-scaled integrated circuits (ICs). In article number 2100002, Michael Cai Wang and co-workers present a novel approach to mitigating electromigration in nanoscale copper interconnects. Significant improvements in the breakdown current density and operating lifetime are observed in hBN-passivated copper interconnects, paving the way for further single-nanometer node scaling of semiconductor and ICs manufacturing HEXAGONAL BORON NITRIDE