Hexagonal Boron Nitride–Graphene Heterostructures: Synthesis and Interfacial Properties

Abstract

Research on in-plane and vertically-stacked heterostructures of graphene and hexagonal boron nitride (h-BN) have attracted intense attentions for energy band engineering and device performance optimization of graphene. In this review article, recent advances in the controlled syntheses, interfacial structures, and electronic properties, as well as novel device constructions of h-BN and graphene heterostructures are highlighted. Firstly, diverse synthesis approaches for in-plane h-BN and graphene (h-BN-G) heterostructures are reviewed, and their applications in nanoelectronics are briefly introduced. Moreover, the interfacial structures and electronic properties of h-BN-G heterojunctions are discussed, and a zigzag type interface is found to preferentially evolve at the linking edge of the two structural analogues. Secondly, several synthetic routes for the vertically-stacked graphene/h-BN (G/h-BN) heterostructures are also reviewed. The role of h-BN as perfect dielectric layers in promoting the device performance of graphene is presented. Finally, future research directions in the synthesis and application of such heterostructures are discussed.

Fundamentals of Chemical Vapor Deposited Graphene and Emerging Applications

“…Significant research interest has been given to develop atomically thin 2D heterostructure of graphene and hexagonal boron nitride (hBN) [100]. hBN can be considered as a structural analogue of graphene, which is composed of alternating boron and nitrogen atoms in a honeycomb lattice rather than the carbon atoms.…”

“…hBN can be considered as a structural analogue of graphene, which is composed of alternating boron and nitrogen atoms in a honeycomb lattice rather than the carbon atoms. Graphene with a zero bandgap is a semimetallic as discussed in Section 1, while hBN with a bandgap of ~6 eV is insulating [100][101][102][103][104][105][106][107]. Significant carrier mobility of graphene has been achieved on atomically flat hBN as a dielectric layer for the FET device.…”

Graphene-Paper Based Electrochemical Sensors

“…They also demonstrated that as-synthesized graphene films could be transferred to other substrates (Figure 1b and c). To meet some special requirements, non-metal materials, such as Si [14,15], SiO 2 [26][27][28], BN [29,30] and Si 3 N 4 [31,32], were also used as substrates. However, the non-metal substrates showed the drawback limitations including slow growth rate and discontinuous size.…”

Gradient and Layered Boron Nitride Formation Under Effect of Concentrated Light in a Flow of Nitrogen

“…8 A comprehensive overview of the current status of the different synthesis processes for BN has demonstrated formation of different properties for BN powders highlighting the advantages of every synthetic methods. [9][10][11][12][13][14][15][16][17][18][19][20] Solar heating is a promising alternative energy source for nanotechnology. A xenon high-flux optical simulator (also artificial sun) that provides illumination approximating natural sunlight in controllable indoor tests under laboratory conditions is a good model of this source.…”