Hexagonal boron nitride epitaxial layers as neutron detector materials

Li, J.; Dahal, R.; Majety, S.; Lin, J. Y.; Jiang, Hongxing

doi:10.1016/j.nima.2011.07.040

Cited by 115 publications

(95 citation statements)

References 12 publications

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“…h-BN has many application elds in some industries which include automotive, glass, high temperature applications, cosmetic and steel industry [2,3]. There are also some applications in nuclear technology such as in neutron detectors and neutron shielding applications [4]. There are some studies related with h-BN which commonly were studied on neutron properties [5].…”

Section: Introductionmentioning

confidence: 99%

Gamma Attenuation Behavior of h-BN and h-BN-TiB₂Composites

et al. 2014

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Hexagonal boron nitride (h-BN) and hexagonal boron nitride-titanium diboride (h-BN-TiB2) composites are advanced materials for high-tech applications. They were investigated against gamma radioisotope sources Cs-137 and Co-60 which have gamma peaks 0.662 MeV for Cs-137, and 1.17 and 1.33 MeV for Co-60. Materials have been produced at 1800• C temperature in argon atmosphere without pressure during 2 h time. Linear and mass attenuation coecients were calculated for the materials. Gamma transmission technique was used in the experiments. The experimental investigated mass attenuation coecients of the materials for Cs-137 and Co-60 gamma radioisotope sources were compared with XCOM computer code. For h-BN-TiB2 composites the ratio of TiB2 in the composites is 55% by weight. So gamma attenuation eects of adding TiB2 to h-BN were discussed. It could be said that adding TiB2 to h-BN increases the linear gamma attenuation of the samples.

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Section: Introductionmentioning

confidence: 99%

Gamma Attenuation Behavior of h-BN and h-BN-TiB₂Composites

et al. 2014

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“…It is a suitable material for producing nanotubes [5], hydrogen storage [6], neutron detectors [7], and other technological applications.…”

Section: Introductionmentioning

confidence: 99%

A study on Si and P doped h-BN sheets: DFT calculations

Kökten¹,

Erkoç²

2014

Turk J Phys

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Structural properties and energetics of silicon and phosphorus doped hexagonal boron nitride sheets were investigated by performing density functional theory calculations. The dopant atoms were substituted in a neutral charge state at either the B or the N site in the system as an impurity. All the systems under consideration were fully optimized.A systematic study was performed to see the effect of cell size on the calculated quantities, such as bond length, charge transfer, and defect formation energies. It was found that both silicon and phosphorus atom substitutions cause the bond lengths to increase with respect to the pristine sheets. Si atom replaced on the N site yields relatively large charge transfer from Si to the lattice. Substitutions of Si at the B site and of P at the N site are exothermic processes, while for the other cases the processes are endothermic.

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“…7,8 With its large thermal neutron cross-section, h-BN is also a promising material for realizing high efficiency and low cost solid-state neutron detectors. 9,10 Our knowledge concerning the band structure and optical properties of h-BN is limited. In spite of the recognition of the importance of h-BN for emerging applications, many of its fundamental physical properties are still unknown.…”

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confidence: 99%

“…[7][8][9][10] Epitaxial h-BN layers with high optical qualities can be achieved, 7,20 but these materials generally lack the intrinsic FX transitions above 5.7 eV due to the presence of native and point defects. 7,20 Most recent studies have suggested that the D-series emission lines are due to the recombination of excitons bound to deep acceptors formed by carbon impurities occupying the nitrogen sites, and h-BN epilayers exhibiting pure intrinsic FX emission can be obtained by growing the materials under high ammonia flow rates.…”

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Nature of exciton transitions in hexagonal boron nitride

Cao

Hoffman

et al. 2016

Applied Physics Letters

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In contrast to other III-nitride semiconductors GaN and AlN, the intrinsic (or free) exciton transition in hexagonal boron nitride (h-BN) consists of rather complex fine spectral features (resolved into six sharp emission peaks) and the origin of which is still unclear. Here, the free exciton transition (FX) in h-BN bulk crystals synthesized by a solution method at atmospheric pressure has been probed by deep UV time-resolved photoluminescence (PL) spectroscopy. Based on the separations between the energy peak positions of the FX emission lines, the identical PL decay kinetics among different FX emission lines, and the known phonon modes in h-BN, we suggest that there is only one principal emission line corresponding to the direct intrinsic FX transition in h-BN, whereas all other fine features are a result of phonon-assisted transitions. The identified phonon modes are all associated with the center of the Brillouin zone. Our results offer a simple picture for the understanding of the fundamental exciton transitions in h-BN.

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Hexagonal boron nitride epitaxial layers as neutron detector materials

Cited by 115 publications

References 12 publications

Gamma Attenuation Behavior of h-BN and h-BN-TiB₂Composites

Gamma Attenuation Behavior of h-BN and h-BN-TiB₂Composites

A study on Si and P doped h-BN sheets: DFT calculations

Nature of exciton transitions in hexagonal boron nitride

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Hexagonal boron nitride epitaxial layers as neutron detector materials

Cited by 115 publications

References 12 publications

Gamma Attenuation Behavior of h-BN and h-BN-TiB2Composites

Gamma Attenuation Behavior of h-BN and h-BN-TiB2Composites

A study on Si and P doped h-BN sheets: DFT calculations

Nature of exciton transitions in hexagonal boron nitride

Contact Info

Product

Resources

About

Gamma Attenuation Behavior of h-BN and h-BN-TiB₂Composites

Gamma Attenuation Behavior of h-BN and h-BN-TiB₂Composites