Hexagon versus Trimer Formation in In Nanowires on Si(111): Energetics and Quantum Conductance

Stekolnikov, A. A.; Seino, K.; Bechstedt, F.; Wippermann, Stefan Martin; Schmidt, Wolf Gero; Calzolari, Arrigo; Nardelli, Marco Buongiorno

doi:10.1103/physrevlett.98.026105

Cited by 67 publications

(75 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The 4 ϫ 1 unit cell is indicated. Adapted from Stekolnikov et al, 2007. structure is nicely captured by the various DFT calculations ͑Cho et , 2005Wang et al, 2003;González et al, 2005González et al, , 2006bTsay, 2005;López-Lozano et al, 2006;Cho and Lee, 2007;Stekolnikov et al, 2007͒ for the structure model by Bunk et al ͑1999͒. Figure 18 shows the experimentally determined Fermi contours of all three bands ͑Ahn, Byun, et al, 2004͒.…”

Section: Atomic and Electronic Structurementioning

confidence: 99%

“…Stekolnikov et al ͑2007͒ also found the 4 ϫ 2 hexagon structure to be metastable but obtained a stable 8 ϫ 2 arrangement. 9 The strongest evidence in favor of the hexagon model is the observation of a nonmetallic ground state.…”

mentioning

confidence: 99%

“…The stability of the In hexagon arrangement was challenged by Cho and Lee ͑2007͒ who claimed that the structure by González et al ͑2005, 2006b͒ Adapted from Stekolnikov et al, 2007. relaxed. Stekolnikov et al ͑2007͒ also found the 4 ϫ 2 hexagon structure to be metastable but obtained a stable 8 ϫ 2 arrangement.…”

mentioning

confidence: 99%

“…Recent theoretical studies ͑González et al., 2005, 2006bStekolnikov et al, 2007͒ indicated that the Peierls-type dimerization of the outermost In atoms is accompanied by a shear distortion, whereby neighboring zigzag wires are displaced in opposite directions. This mechanism leads to the formation of In hexagons rather than trimers, produces a 4 ϫ 2 periodicity, and fully opens up a band gap ͑Fig.…”

mentioning

confidence: 99%

See 3 more Smart Citations

Colloquium: Electronic instabilities in self-assembled atom wires

2010

View full text Add to dashboard Cite

Many quasi-one-dimensional ͑1D͒ materials are experimental approximations to the textbook models of Peierls instabilities and collective excitations in 1D electronic systems. The recently observed self-assembly of atom wires on solid surfaces has provided fascinating new insights into the nature of their structural and electronic instabilities, from both real-space and momentum-space perspectives. In this Colloquium, three of the most studied atom wire arrays are highlighted, all featuring multiple surface-state bands. One of these is made of indium atoms on a flat silicon ͑111͒ surface, while the two others consist of gold atoms on surfaces that are vicinal to Si͑111͒. The experimental and theoretical results are discussed with a focus on the detailed mechanisms of the observed phase transitions and on the role of microscopic defects.

show abstract

Section: Atomic and Electronic Structurementioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Colloquium: Electronic instabilities in self-assembled atom wires

2010

View full text Add to dashboard Cite

show abstract

“…Indium atoms on Si(111) form NWs with a metallic character, [30][31][32][33][34][35][36][37] but also on high-index surfaces, such as Si(557), atomic wires are observed. 38 This is similar to Au, which preferentially forms chains on the high-index surfaces like Si(553) 17,20,[39][40][41] and Si(557) 20,25,40,[42][43][44][45][46] .…”

Section: Introductionmentioning

confidence: 99%

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

Vanpoucke

2014

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Atomic scale nanowires attract enormous interest in a wide range of fields. On the one hand, due to their quasi-one-dimensional nature, they can act as a experimental testbed for exotic physics: Peierls instability, charge density waves, and Luttinger liquid behavior. On the other hand, due to their small size, they are of interest for future device applications in the micro-electronics industry, but also for applications regarding molecular electronics. This versatile nature makes them interesting systems to produce and study, but their size and growth conditions push both experimental production and theoretical modeling to their limits. In this review, modeling of atomic scale nanowires on semiconductor surfaces is discussed focusing on the interplay between theory and experiment. The current state of modeling efforts on Pt-and Au-induced nanowires on Ge (001) is presented, indicating their similarities and differences. Recently discovered nanowire systems (Ir, Co, Sr) on the Ge(001) surface are also touched upon. The importance of scanning tunneling microscopy as a tool for direct comparison of theoretical and experimental data is shown, as is the power of density functional theory as an atomistic simulation approach. It becomes clear that complementary strengths of theoretical and experimental investigations are required for successful modeling of the atomistic nanowires, due to their complexity.

show abstract

Metal–insulator transition in Si(111)‐(4 × 1)/(8 × 2)‐In studied by optical spectroscopy

Speiser

Chandola

Hinrichs

et al. 2010

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

Measurements of the surface vibrational modes and optical response of Si(111)-(4 Â 1)/(8 Â 2)-In are compiled and a comparison to ab initio calculations performed within DFT-LDA formalism is given. Surface resonant Raman spectroscopy allows identifying a number of surface phonons with high spectral precision. The phase transition of the (4 Â 1)-(8 Â 2) surface structure is found to be accompanied by characteristic changes of the surface phonons, which are discussed with respect to various structural models suggested. The optical anisotropy of the (8 Â 2) phase shows that the anisotropic Drude tail of the (4 Â 1) phase is replaced by two peaks at 0.50 and 0.72 eV. The spectroscopic signatures of the (4 Â 1) and (8 Â 2) phases agree with a metal-insulator transition. The mid-IRanisotropic optical response of the insulating (8 Â 2) phase is interpreted in terms of electronic single particle excitations between surface electronic bands related to the In-nanowire surface. Comparison of the measured optical transitions with DFT ab initio calculations for the hexagon model and the trimer model of the (8 Â 2) structure shows evidence for the existence of the hexagon structure.

show abstract

Hexagon versus Trimer Formation in In Nanowires on Si(111): Energetics and Quantum Conductance

Cited by 67 publications

References 35 publications

Colloquium: Electronic instabilities in self-assembled atom wires

Colloquium: Electronic instabilities in self-assembled atom wires

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

Metal–insulator transition in Si(111)‐(4 × 1)/(8 × 2)‐In studied by optical spectroscopy

Contact Info

Product

Resources

About