Hexagon structures in a two-dimensional dc-driven gas discharge system

Ammelt, E.; Astrov, Yu. A.; Purwins, H.‐G.

doi:10.1103/physreve.58.7109

Cited by 72 publications

(68 citation statements)

References 28 publications

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“…The argument assumes that |J + | ≫ |J e | throughout the discharge volume. This assumption is in disagreement with the boundary condition (8). A somewhat different argument based on a constant space charge through the whole system is given in [23].…”

Section: B the Argument Of Engel And Steenbeckmentioning

confidence: 99%

“…Recently, the amazing variety of spatio-temporal patterns formed mainly in the transversal direction of a short dc driven system consisting of a gas discharge layer and a semiconductor layer sandwiched between two coplanar electrodes has drawn considerable attention [4][5][6][7][8][9][10][11][12]. These patterns are due to the nonlinear gas discharge being coupled to the linearly responding semiconductor.…”

Section: Introductionmentioning

confidence: 99%

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Transition from Townsend to glow discharge: Subcritical, mixed, or supercritical characteristics

Sijacic

Ebert

2002

Phys. Rev. E

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The transition from Townsend to glow discharge is investigated numerically in one space dimension in full parameter space within the classical model: with electrons and positive ions drifting in the local electric field, impact ionization by electrons (α process), secondary electron emission from the cathode (γ process) and space charge effects. We also perform a systematic analytical small current expansion about the Townsend limit up to third order in the current that fits our numerical data very well. Depending on the two determining parameters γ and system size pd, the transition from Townsend to glow discharge can show the textbook subcritical behavior, but for smaller values of pd, we also find supercritical or some unexpected intermediate "mixed" behavior. Our work shows the same qualitative dependence of U = U (I, pd) for fixed γ as the old experiments by Pokrovskaya-Soboleva and Klyarfeld. Furthermore, the analysis lays the basis for understanding the complex spatio-temporal patterns in short planar barrier discharge systems.52. 80.-s, 05.45.-a, 51.50.+v, 47.54.+r

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Section: B the Argument Of Engel And Steenbeckmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Transition from Townsend to glow discharge: Subcritical, mixed, or supercritical characteristics

Sijacic

Ebert

2002

Phys. Rev. E

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“…[2][3][4][5][6][7][8][9][10][11][12][13], a planar glow discharge layer with short length in the forward direction and wide lateral dimensions is coupled to a semiconductor layer with low conductivity. The whole structure is sandwiched between two planar electrodes to which a dc voltage U t is applied.…”

Section: Previously Suggested Reductions To Reaction-diffusion Mmentioning

confidence: 99%

“…In comparison to the other systems, the glow discharge system has the advantage of particular convenient experimental handling and time scales [14]. In addition to structures familiar from other physical systems, glow discharges continue to exhibit new structures that might be specific for this system [2][3][4][5][6][7][8][9][10][11][12][13]. We will focus on the experiment in Ref.…”

mentioning

confidence: 99%

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Period doubling cascade in glow discharges: Local versus global differential conductivity

2004

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Turing Instability of Liquid–Solid Metal Systems

Xing,

Zhang,

Gao

et al. 2023

Advanced Materials

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The classical Turing morphogenesis often occurs in nonmetallic solution systems due to the sole competition of reaction and diffusion processes. Here, this work conceives that gallium (Ga) based liquid metals (LMs) possess the ability to alloy, diffuse, and react with a range of solid metals (SMs) and thus should display Turing instability leading to a variety of nonequilibrium spatial concentration patterns. This work discloses a general mechanism for obtaining labyrinths, stripes, and spots‐like stationary Turing patterns in the LM–SM reaction‐diffusion systems (GaX‐Y), taking the gallium indium alloy and silver substrate (GaIn‐Ag) system as a proof of concept. It is only when Ga atoms diffuse over Y much faster than X while X reacts with Y preferentially, that Turing instability occurs. In such a metallic system, Ga serves as an inhibitor and X as an activator. The dominant factors in tuning the patterning process include temperature and concentration. Intermetallic compounds contained in the Turing patterns and their competitive reactions have also been further clarified. This LM Turing instability mechanism opens many opportunities for constructing microstructure systems utilizing condensed matter to experimentally explore the general morphogenesis process.

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Hexagon structures in a two-dimensional dc-driven gas discharge system

Cited by 72 publications

References 28 publications

Transition from Townsend to glow discharge: Subcritical, mixed, or supercritical characteristics

Transition from Townsend to glow discharge: Subcritical, mixed, or supercritical characteristics

Period doubling cascade in glow discharges: Local versus global differential conductivity

Turing Instability of Liquid–Solid Metal Systems

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