Heterostructured ferromagnet–topological insulator with dual-phase magnetic properties

Chang, Shan-Chwen; Chuang, Po-Yu; Chong, Cheong Wei; Chen, Yu-Jung; Huang, Jie; Chen, Po Wen; Tseng, Yuan-Chieh

doi:10.1039/c8ra00068a

Cited by 19 publications

(20 citation statements)

References 63 publications

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“…The study of FMM–TI heterostructures has mainly been motivated by the prospect of efficient spintronic devices, as TIs are known to generate high spin–orbit torque. [ 136,137 ] Various growth methods have been explored to synthesize such heterostructures, including laser molecular beam epitaxy (LMBE), [ 138,139 ] molecular beam epitaxy (MBE), [ 140 ] laser ablation deposition, [ 141 ] hot‐wall epitaxy, [ 142 ] metal organic chemical vapour deposition (MOCVD), [ 143 ] radio‐frequency (RF) magnetron sputtering, [ 144 ] etc. Even though proximity coupling has been successfully achieved in FMM–TI heterostructures, [ 145,146 ] the FMM electrically shorts the TI channel, making it difficult to detect any signature of magnetization in the TI in transport experiments.…”

Section: Recent Results In Topological Insulator (Ti) – Magnetic Materials (Mm) Heterostructuresmentioning

confidence: 99%

“…[ 142–144 ] For example, Chang et al. [ 140 ] studied Permalloy (Py; Ni 80 Fe 20 ) and Py‐Bi 2 Se 3 heterostructures. Figure a,b show the magnetization versus magnetic field data obtained for the two structures.…”

Section: Recent Results In Topological Insulator (Ti) – Magnetic Materials (Mm) Heterostructuresmentioning

confidence: 99%

Section: Recent Results In Topological Insulator (Ti) – Magnetic Materials (Mm) Heterostructuresmentioning

confidence: 99%

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Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

et al. 2021

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Inducing long‐range magnetic order in 3D topological insulators can gap the Dirac‐like metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low‐energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. This review focuses on one strategy: inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. The unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity‐coupled magnetic order in topological insulators are discussed. Some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, are also highlighted, and the authors conclude with an outlook on remaining challenges and opportunities in the field.

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Section: Recent Results In Topological Insulator (Ti) – Magnetic Materials (Mm) Heterostructuresmentioning

confidence: 99%

Section: Recent Results In Topological Insulator (Ti) – Magnetic Materials (Mm) Heterostructuresmentioning

confidence: 99%

See 1 more Smart Citation

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

et al. 2021

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“…The study of FMM-TI heterostructures has mainly been motivated by the prospect of efficient spintronic devices, as TIs are known to generate high spin-orbit torque [123,124]. Various growth methods have been explored to synthesize such heterostructures, including laser molecular beam epitaxy (LMBE) [125,126], molecular beam epitaxy (MBE) [127], laser ablation deposition [128], hot-wall epitaxy [129], metal organic chemical vapour deposition (MOCVD) [130], radio-frequency (RF) magnetron sputtering [131] etc. Even though proximity coupling has been successfully achieved in FMM-TI heterostructures [132,133], the FMM electrically shorts the TI channel, making it difficult to detect any signature of magnetization in the TI in transport experiments [128].…”

Section: Ferromagnetic Metal (Fmm)mentioning

confidence: 99%

“…Indeed, diffusion of magnetic ions into TIs and formation of intermediate phases at the interface has been one of the issues plaguing this field [129][130][131]. For example, Chang et al [127] studied Permalloy (Py; Ni 80 Fe 20 ) and Py-Bi 2 Se 3 heterostructures. Figure 4a) and b) show the magnetization vs. magnetic field data obtained for the two structures.…”

Section: Ferromagnetic Metal (Fmm)mentioning

confidence: 99%

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Bhattacharyya,

Akhgar,

Gebert

et al. 2020

Preprint

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Inducing long-range magnetic order in three-dimensional topological insulators can gap the Diraclike metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low-energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. In this review, we focus on one strategy, inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. We discuss the unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity-coupled magnetic order in topological insulators. We also highlight some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, and we conclude with an outlook on remaining challenges and opportunities in the field.

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Topological Antiferromagnetic Van der Waals Phase in Topological Insulator/Ferromagnet Heterostructures Synthesized by a CMOS‐Compatible Sputtering Technique

et al. 2022

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Breaking time‐reversal symmetry by introducing magnetic order, thereby opening a gap in the topological surface state bands, is essential for realizing useful topological properties such as the quantum anomalous Hall and axion insulator states. In this work, a novel topological antiferromagnetic (AFM) phase is created at the interface of a sputtered, c‐axis‐oriented, topological insulator/ferromagnet heterostructure—Bi2Te3/Ni80Fe20 because of diffusion of Ni in Bi2Te3 (Ni‐Bi2Te3). The AFM property of the Ni‐Bi2Te3 interfacial layer is established by observation of spontaneous exchange bias in the magnetic hysteresis loop and compensated moments in the depth profile of the magnetization using polarized neutron reflectometry. Analysis of the structural and chemical properties of the Ni‐Bi2Te3 layer is carried out using selected‐area electron diffraction, electron energy loss spectroscopy, and X‐ray photoelectron spectroscopy. These studies, in parallel with first‐principles calculations, indicate a solid‐state chemical reaction that leads to the formation of Ni−Te bonds and the presence of topological antiferromagnetic (AFM) compound NiBi2Te4 in the Ni‐Bi2Te3 interface layer. The Neél temperature of the Ni‐Bi2Te3 layer is ≈63 K, which is higher than that of typical magnetic topological insulators (MTIs). The presented results provide a pathway toward industrial complementary metal−oxide−semiconductor (CMOS)‐process‐compatible sputtered‐MTI heterostructures, leading to novel materials for topological quantum devices.

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Heterostructured ferromagnet–topological insulator with dual-phase magnetic properties

Abstract: In this study we visualized thermodynamically stable chalcogen compounds in the vicinity of a Py/Bi2Se3 interface with dual magnetic order due to a phase separation effect.

Cited by 19 publications

References 63 publications

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Topological Antiferromagnetic Van der Waals Phase in Topological Insulator/Ferromagnet Heterostructures Synthesized by a CMOS‐Compatible Sputtering Technique

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