Heterostructure ReS2/GaAs Saturable Absorber Passively Q-Switched Nd:YVO4 Laser

Liu, Lijie; Chu, Hongwei; Zhang, Xiaodong; Pan, Han; Zhao, Shengzhi; Li, Dechun

doi:10.1186/s11671-019-2953-7

Cited by 8 publications

(3 citation statements)

References 24 publications

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“…Another similar graphene/SiO 2 /lightly p-doped Si device has been checked by another group and the same conclusion has been obtained. [92] This monolayer graphene photodetector dominated by interfacial gating [44] shows an outstanding performance. It enables a highly sensitive detection for a light signal of less than 1 nW and a fast response time of ≈400 ns.…”

Section: Interfacial Gatingmentioning

confidence: 99%

Photogating in Low Dimensional Photodetectors

2017

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Low dimensional materials including quantum dots, nanowires, 2D materials, and so forth have attracted increasing research interests for electronic and optoelectronic devices in recent years. Photogating, which is usually observed in photodetectors based on low dimensional materials and their hybrid structures, is demonstrated to play an important role. Photogating is considered as a way of conductance modulation through photoinduced gate voltage instead of simply and totally attributing it to trap states. This review first focuses on the gain of photogating and reveals the distinction from conventional photoconductive effect. The trap‐ and hybrid‐induced photogating including their origins, formations, and characteristics are subsequently discussed. Then, the recent progress on trap‐ and hybrid‐induced photogating in low dimensional photodetectors is elaborated. Though a high gain bandwidth product as high as 109 Hz is reported in several cases, a trade‐off between gain and bandwidth has to be made for this type of photogating. The general photogating is put forward according to another three reported studies very recently. General photogating may enable simultaneous high gain and high bandwidth, paving the way to explore novel high‐performance photodetectors.

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Section: Interfacial Gatingmentioning

confidence: 99%

Photogating in Low Dimensional Photodetectors

2017

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“…A future direction for the SAs is to investigate the integration of the emergent ReS 2 with conventional well-established materials such as MoS 2 and WS 2 to form heterostructures [142][143][144][145]. This is likely to help in achieving SAs with greater nonlinearity, higher damage threshold, as well as ultrafast relaxation time by using the properties of various materials.…”

Section: Discussion and Outlookmentioning

confidence: 99%

A Review on Rhenium Disulfide: Synthesis Approaches, Optical Properties, and Applications in Pulsed Lasers

et al. 2021

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Rhenium Disulfide (ReS2) has evolved as a novel 2D transition-metal dichalcogenide (TMD) material which has promising applications in optoelectronics and photonics because of its distinctive anisotropic optical properties. Saturable absorption property of ReS2 has been utilized to fabricate saturable absorber (SA) devices to generate short pulses in lasers systems. The results were outstanding, including high-repetition-rate pulses, large modulation depth, multi-wavelength pulses, broadband operation and low saturation intensity. In this review, we emphasize on formulating SAs based on ReS2 to produce pulsed lasers in the visible, near-infrared and mid-infrared wavelength regions with pulse durations down to femtosecond using mode-locking or Q-switching technique. We outline ReS2 synthesis techniques and integration platforms concerning solid-state and fiber-type lasers. We discuss the laser performance based on SAs attributes. Lastly, we draw conclusions and discuss challenges and future directions that will help to advance the domain of ultrafast photonic technology.

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“…Specifically, the vertical growth of two-dimensional ReS 2 is highly spontaneous and independent of the substrate [ 81 ]. The high packing density (∼10 8 cm −2 ) of the ReS 2 nanosheets promotes a substantial number of active Re atoms to be exposed at the sheet edges, providing abundant active sites for catalytic processes [ 33 , 70 , 80 , 82 , 83 , 84 ]. The common precursors for the CVD synthesis of ReS 2 are ammonium rhenate (NH 4 ReO 4 ), Re powder [ 82 ], and rhenium-containing oxides (ReO 3 or Re 2 O 7 ), with sulfur powder used as the predominant sulfur source and heated in a different zone [ 33 , 85 , 86 ].…”

Section: Synthetic Methods For Res 2 and Its Compo...mentioning

confidence: 99%

Photocatalytic Applications of ReS2-Based Heterostructures

Wang

et al. 2023

Molecules

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ReS2-based heterostructures, which involve the coupling of a narrow band-gap semiconductor ReS2 with other wide band-gap semiconductors, have shown promising performance in energy conversion and environmental pollution protection in recent years. This review focuses on the preparation methods, encompassing hydrothermal, chemical vapor deposition, and exfoliation techniques, as well as achievements in correlated applications of ReS2-based heterostructures, including type-I, type-II heterostructures, and Z-scheme heterostructures for hydrogen evolution, reduction of CO2, and degradation of pollutants. We believe that this review provides an overview of the most recent advances to guide further research and development of ReS2-based heterostructures for photocatalysis.

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Heterostructure ReS2/GaAs Saturable Absorber Passively Q-Switched Nd:YVO4 Laser

Cited by 8 publications

References 24 publications

Photogating in Low Dimensional Photodetectors

Photogating in Low Dimensional Photodetectors

A Review on Rhenium Disulfide: Synthesis Approaches, Optical Properties, and Applications in Pulsed Lasers

Photocatalytic Applications of ReS2-Based Heterostructures

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