Heterostructure optimization for increasing LED efficiency

Rabinovich, Oleg; Legotin, Sergey; Didenko, S.; Yakimov, E. B.; Osipov, Yuriy; Федорченко, И. В.

doi:10.7567/jjap.55.05fj13

Cited by 15 publications

(7 citation statements)

References 24 publications

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“…SimWindows software (SW) was used in current investigation [6]. Main features of the software and method of its usage for semiconductor devices simulation have been described in [2][3][4][5][6][7].…”

Section: Methodsmentioning

confidence: 99%

“…Our investigations based on computer simulation showed that, based on such heterostructures not only photodiodes can be produced but also phototransistors (PT) with a sensitivity of more than 100 A/cm 2 , in this wavelengths area [2][3][4][5][6][7]. It has been proposed ultraviolet phototransistor (UV PT) structure, based on the capabilities of this technology with GaN and AlGaN collector.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

AlGaN Heterostructure Optimization for Photodetectors

Didenko¹,

Rabinovich²,

Legotin³

et al. 2016

J. Nano- Electron. Phys.

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GaN-based photodetectors are of great interest for applications involving detection and imaging in the UV-visible wavelength range. Most of experimental and theoretical work in this area has been focused so far on Schottky diode and p-in structures for solar blind applications. However, it seems that bipolar phototransistors with their additional functionality could also be of potential interest. In this work we present the results of phototransistors parameters simulation using the software-Sim Windows. The structure analyzed consisted, counting from the substrate, of n-AlxGa1-xN collector, p-GaN base and n-AlxGa1-xN emitter. The Al mole fraction in the collector and emitter was varied from x  0.2 to x  0.3. The collector and emitter thickness was taken as 0.9 m. The doping level in the emitter and collector was varied from 10 17 to 10 19 cm-3. The p-GaN base thickness was taken as 0.3 m, with doping of 10 17-10 18 cm-3. The electron and hole lifetimes in the base were taken as 12 ns.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

AlGaN Heterostructure Optimization for Photodetectors

Didenko¹,

Rabinovich²,

Legotin³

et al. 2016

J. Nano- Electron. Phys.

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“…structures. The average size of ferromagnetic MnSb clusters in granular structures was 24 nm [36][37][38][39][40]. Fig.…”

Section: Spintronicsmentioning

confidence: 94%

Physico-Chemical Analysis of Semiconductor-Ferromagnet Systems as a Basis of Synthesis of Magnetic-Granulated Spintronic Structures

Маренкин¹,

Федорченко²,

Изотов³

et al. 2018

RENSIT

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An analytical review devoted to the physicochemical principles of the synthesis of granular structures in semiconductor-ferromagnet systems is represented. In these systems, as semiconductors, compounds are A II B IV C V 2 , A III C V , A II 2 C V 3 and A II C V 2 and manganese compounds (MnP, MnAs and MnSb) as ferromagnets. It is shown that in magnetostransmitter devices magnetogranular structures are an alternative to superlattices, and the effects of GMR and TMR are also possible. Advantages of magneto-granular structures are considered, such as: less labor-intensive methods of production, milder requirements for the dimension of a ferromagnet and a nonmagnet, the possibility of forming a stable interface, soft requirements to the thickness of layers than in the case of superlattices, etc. It is shown that, due to the high mobility of charge carriers, the use of semiconductors as a matrix is more preferable than metals or dielectrics. The basic principles for the creation of granular structures with high values of magnetoresistance based on eutectic-type systems are formulated. During the crystallization of the eutectic, the simultaneous crystallization of all the phases that make up the eutectic takes place, leading to the formation of a specific fine-dispersed structure. The use of ultrahigh supersaturations leads to significant supercooling, which contributes to metastable crystallization. This causes a synergistic effect that stimulates nanostructuring, and promotes the creation of granular structures. The results of investigations of semiconductor-ferromagnet systems are presented and the possibility of obtaining magnetogranular structures with high magnetoresistance in them is shown.

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“…Our investigations based on computer simulation showed that, based on such NH, not only photodiodes but also phototransistors (PT) with a sensitivity of more than 100 A/cm 2 can be produced, in this wavelengths area [35][36][37][38][39][40][41][42][43]. Ultraviolet phototransistor (UV PT) structure has been proposed, based on the capabilities of this technology with GaN and AlGaN collector.…”

Section: Photodetector (Phototransistor) Improvementsmentioning

confidence: 99%

LED and Phototransistor Simulation

Yurchuk¹,

Rabinovich²,

Didenko³

2017

Optoelectronics - Advanced Device Structures

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Optoelectronics (e.g., light-emitting diodes, photodetectors) is one of the most widely used fields nowadays. But it is still necessary to improve their characteristics for using in general lighting. In this chapter, the heterostructure conductivity type, impurity and indium atoms influence on the LEDs and phototransistor characteristics are investigated by computer simulation. It was found that current-voltage characteristic and quantum efficiency depend on impurity and indium atoms change a lot. By varying impurity and indium atom concentration, controlling their distribution in InGaN and AlGaP heterostructure LEDs and photodetector characteristics can be improved.

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Heterostructure optimization for increasing LED efficiency

Cited by 15 publications

References 24 publications

AlGaN Heterostructure Optimization for Photodetectors

AlGaN Heterostructure Optimization for Photodetectors

Physico-Chemical Analysis of Semiconductor-Ferromagnet Systems as a Basis of Synthesis of Magnetic-Granulated Spintronic Structures

LED and Phototransistor Simulation

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