Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics

Mistele, D.; Rotter, Thomas; Bougrioua, Z.; Röver, K. S.; Fedler, F.; Klausing, H.; Stemmer, J.; Semchinova, O.; Aderhold, J.; Graul, J.

doi:10.1002/1521-396x(200111)188:1<255::aid-pssa255>3.3.co;2-c

Cited by 2 publications

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“…16 Recently, the use of wet-gallium oxide for gate dielectrics has demonstrated high transconductance and low leakage current. 17,18 Crystalline gallium oxide ͑␤-Ga 2 O 3 ͒ itself is also an attractive material for sensing various gases and as a transparent conductive oxide. [19][20][21] For further practical use of wet oxidation and gallium oxide, it is essential to understand fundamental information about such oxidation and oxides.…”

Section: Introductionmentioning

confidence: 99%

Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution

Shiozaki

Hashizume

2009

Journal of Applied Physics

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Surface control of n-GaN was performed by applying a photoelectrochemical oxidation method in a glycol solution to improve the optical and electronic characteristics. The fundamental properties of the oxidation were investigated. The oxidation, chemical composition, and bonding states were analyzed by x-ray photoelectron spectroscopy and micro-Auger electron spectroscopy, in which confirmed the formation of gallium oxide on the surface. The oxide formation rate was about 8 nm/min under UV illumination of 4 mW/ cm 2 . After establishing the basic properties for control of n-GaN oxidation, the surface control technique was applied to achieve low-damage etching, enhancement of the photoluminescence intensity, and selective passivation of the air-exposed sidewalls in an AlGaN/GaN high electron mobility transistor wire structure. The capacitance-voltage measurement revealed the minimum interface-state density between GaN and anodic oxide to be about 5 ϫ 10 11 cm −2 eV −1 , which is rather low value for compound semiconductors.

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Section: Introductionmentioning

confidence: 99%

Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution

Shiozaki

Hashizume

2009

Journal of Applied Physics

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“…7 The use of dielectric layers for gate isolation leads to the development of the first GaN-based metal-oxide semiconductor heterostructure field-(Received September 24, 2002; accepted November 6, 2002) effect transistor (MOSFET) 8 and later to the successful realization of AlGaN/GaN MOSHFET devices. 9,10 Table I summarizes the relevant material properties of the most promising candidates to work as gate dielectrics in the group III-nitride material system. [11][12][13][14][15] In this work, we report on several approaches for the deposition of dielectric layers on GaN and AlGaN surfaces.…”

Section: Introductionmentioning

confidence: 99%

Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

Mistele

Rotter

Horn

et al. 2003

Journal of Elec Materi

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Dielectric layers within III-nitride transistor technology can act either as passivation layers or as gate-dielectric layers. In this paper, we reflect on both issues and present novel approaches of dielectric schemes. In both cases, the elimination of surface traps or, more generally, of surface states is a key issue in obtaining improved device performance. As gate dielectrics, we introduced and investigated thermally and photoelectrochemically generated Al x Ga 2-x O 3 , SiO 2 , the combination of Al x Ga 2-x O 3 and SiO 2 (tandem-dielectric stack), and e-beam-deposited Al 2 O 3 . These dielectric layers serve simultaneously as a passivation layer. In addition, we introduced plasma-enhanced chemical-vapor deposition (PECVD)-deposited SiN x for passivation. The results highlight the importance of passivation and the introduction of gate dielectrics and emphasize the relationship between surface states and improved direct-current (DC) performance. Backed by additional measurements, we propose a different gateleakage mechanism for heterostructure field-effect transistor (HFET) and metal-oxide semiconductor heterostructure field-effect transistor (MOSHFET) devices.

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Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics

Cited by 2 publications

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Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution

Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution

Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

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