Heteroleptic magnesium complexes containing amidinate and aminoalkoxy ligands

Kim, Hyo‐Suk; George, Sheby Mary; Jung, Eun‐Hee; Park, Bo Keun; Son, Seung Uk; Kim, Chang Gyoun; Chung, Taek‐Mo

doi:10.1016/j.poly.2015.09.018

Cited by 8 publications

(3 citation statements)

References 36 publications

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“…Complexes 1 and 2 crystallized in the monoclinic space group, whereas complexes 3 – 5 crystallized in the triclinic space group (Table ). All complexes formed essentially centrosymmetric dimers with aminoalkoxide oxygen bridging the two metal centers in the complexes via μ 2 –O bonding, similar to the bonding pattern of other metal complexes (Mg, Sr, In, Co, Zn) containing aminoalkoxide reported previously. − In the case of compounds 3–5 , they are also located on crystallographic centers of inversion. All structures have a four-membered Sn 2 O 2 core ring.…”

Section: Resultssupporting

confidence: 78%

Novel Heteroleptic Tin(II) Complexes Capable of Forming SnO and SnO₂ Thin Films Depending on Conditions Using Chemical Solution Deposition

et al. 2021

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A new heteroleptic complex series of tin was synthesized by the salt metathesis reaction of SnX 2 (X = Cl, Br, and I) with aminoalkoxide and various N -alkoxy-functionalized carboxamide ligands. The complexes, [ClSn(dmamp)] 2 ( 1 ), [BrSn(dmamp)] 2 ( 2 ), and [ISn(dmamp)] 2 ( 3 ), were prepared from the salt metathesis reaction of SnX 2 with one equivalent of dmamp; [Sn(dmamp)(empa)] 2 ( 4 ), [Sn(dmamp)(mdpa)] 2 ( 5 ), and [Sn(dmamp)(edpa)] 2 ( 6 ) were prepared via the salt metathesis reaction using complex 2 with one equivalent of N -alkoxy-functionalized carboxamide ligand. Complexes 1 – 5 displayed dimeric molecular structures with tin metal centers interconnected by μ 2 –O bonding via the alkoxy oxygen atom. The molecular structures of complexes 1 – 5 showed distorted trigonal bipyramidal geometries with lone pair electrons in the equatorial position. Using complex 6 as a tin precursor, SnO x films were deposited by chemical solution deposition (CSD) and subsequent post-deposition annealing (PDA) at high temperatures. SnO and SnO 2 films were selectively obtained under controlled PDA atmospheres of argon and oxygen, respectively. The SnO films featured a tetragonal romarchite structure with high crystallinity and a preferred growth orientation along the (101) plane. They also exhibited a lower transmittance of >52% at 400 nm due to an optical band gap of 2.9 eV. In contrast, the SnO 2 films exhibited a tetragonal cassiterite crystal structure and an extremely high transmittance of >97% at 400 nm was observed with an optical band gap of 3.6 eV.

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Section: Resultssupporting

confidence: 78%

Novel Heteroleptic Tin(II) Complexes Capable of Forming SnO and SnO₂ Thin Films Depending on Conditions Using Chemical Solution Deposition

et al. 2021

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“…GeCl 2 ·dioxane, KSeCN, n -BuLi (2.5 M in hexane), dimethylamine (2.0 M in tetrahydrofuran (THF)), and sulfur, selenium, and tellurium powders were purchased from Aldrich. Lithium 1-(dimethylanimo)-2-methylpropane-2-thiolate (Li(dmampS)) was synthesized using a modified literature method. , Functionalized bidentate aminoalcohol, 1-dimethylamino-2-methyl-2-propanol (dmampH), (CH 3 ) 2 NCH 2 C(CH 3 ) 2 OH, and sodium (1-dimethylamino-2-methyl-2-propoxide) (Na(dmamp)) were prepared according to literature procedures. , Ge(dmamp) 2 was synthesized using a modified literature method…”

Section: Methodsmentioning

confidence: 99%

“…20,21 Functionalized bidentate aminoalcohol, 1-dimethylamino-2-methyl-2propanol (dmampH), (CH 3 ) 2 NCH 2 C(CH 3 ) 2 OH, and sodium (1dimethylamino-2-methyl-2-propoxide) (Na(dmamp)) were prepared according to literature procedures. 22,23 Ge(dmamp) 2 was synthesized using a modified literature method. 24 1 H NMR and 13 C NMR spectra were recorded on a Bruker DPX 300 MHz FT−NMR spectrometer.…”

Section: ■ Introductionmentioning

confidence: 99%

Germanium Compounds Containing Ge═E Double Bonds (E = S, Se, Te) as Single-Source Precursors for Germanium Chalcogenide Materials

et al. 2017

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New germanium chalcogenide precursors, S═Ge(dmamp) (3), S═Ge(dmampS) (4), Se═Ge(dmamp) (5), Se═Ge(dmampS) (6), Te═Ge(dmamp) (7), and Te═Ge(dmampS) (8), were synthesized from Ge(dmamp) (1) and Ge(dmampS) (2) using sulfur, selenium, and tellurium powders (dmamp = 1-dimethylamino-2-methyl-2-propanolate, dmampS = 1-dimethylamino-2-methylpropane-2-thiolate). Complexes 1 and 2 were synthesized from metathesis reactions of GeCl·dioxane with 2 equiv of aminoalkoxide or aminothiolate ligands. Thermogravimetric analysis of complex 1 displayed good thermal stability and volatility. The molecular structures of complexes 2-8 from X-ray single crystallography showed distorted trigonal bipyramidal geometry at the germanium centers. Germanium chalcogenide materials (GeSe and GeTe) were obtained from the thermal decomposition of complexes 5, 6, and 8 in hexadecane. X-ray diffraction patterns exhibited that GeSe and GeTe had orthorhombic and rhombohedral phases, respectively. This study affords a facile method to easily prepare germanium chalcogenide materials using well-designed and stable complexes by thermal decomposition of single-source precursors in solution.

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Synthesis of New Heteroleptic Indium Complexes as Potential Precursors for Indium Oxide Thin Films

et al. 2021

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New heteroleptic indium complexes, i. e., [MeIn(mdpa)(tmhd)] 2 (2), [MeIn(mdpa)(acac)] 2 (3), [MeIn(edpa)(tmhd)] 2 (4), and [MeIn (edpa)(acac)] 2 (5), with three different ligands, bearing N-alkoxy carboxamide and β-diketonate were designed and synthesized as indium precursors for indium oxide thin films by atomic layer deposition (ALD) using [Me 2 In(edpa)] 2 and [Me 2 In(mdpa)] 2 (1) as starting materials. The resulting complexes were characterized by NMR and FT-IR spectroscopy, elemental analysis (EA), thermogravimetric analysis (TGA), and single crystal X-ray diffraction. TGA curves of all the complexes showed clear single-step weight losses, with low residual masses of 7-13 %. Among them, complex 5 was volatile and thermally stable, and thus, it can be used as potential indium precursor for indium oxide-based thin films.

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Heteroleptic magnesium complexes containing amidinate and aminoalkoxy ligands

Cited by 8 publications

References 36 publications

Novel Heteroleptic Tin(II) Complexes Capable of Forming SnO and SnO₂ Thin Films Depending on Conditions Using Chemical Solution Deposition

Novel Heteroleptic Tin(II) Complexes Capable of Forming SnO and SnO₂ Thin Films Depending on Conditions Using Chemical Solution Deposition

Germanium Compounds Containing Ge═E Double Bonds (E = S, Se, Te) as Single-Source Precursors for Germanium Chalcogenide Materials

Synthesis of New Heteroleptic Indium Complexes as Potential Precursors for Indium Oxide Thin Films

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Heteroleptic magnesium complexes containing amidinate and aminoalkoxy ligands

Cited by 8 publications

References 36 publications

Novel Heteroleptic Tin(II) Complexes Capable of Forming SnO and SnO2 Thin Films Depending on Conditions Using Chemical Solution Deposition

Novel Heteroleptic Tin(II) Complexes Capable of Forming SnO and SnO2 Thin Films Depending on Conditions Using Chemical Solution Deposition

Germanium Compounds Containing Ge═E Double Bonds (E = S, Se, Te) as Single-Source Precursors for Germanium Chalcogenide Materials

Synthesis of New Heteroleptic Indium Complexes as Potential Precursors for Indium Oxide Thin Films

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Novel Heteroleptic Tin(II) Complexes Capable of Forming SnO and SnO₂ Thin Films Depending on Conditions Using Chemical Solution Deposition

Novel Heteroleptic Tin(II) Complexes Capable of Forming SnO and SnO₂ Thin Films Depending on Conditions Using Chemical Solution Deposition