Heterojunctions and superlattices based on silicon carbide

Лебедев, А. А.

doi:10.1088/0268-1242/21/6/r01

Cited by 163 publications

(112 citation statements)

References 114 publications

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“…Так, например, молекулы СО связываются с поверхностью металлов (напри-мер, Ru(001), Pt(111)) через атом углерода, причем С-О-связь направлена по нормали к поверхности металла [7]. Предположив, что та же картина имеет место и при адсорбции на SiC, приняв a I    , где потенциал ионизации СО равен 14,01 эВ [6], и считая, что в адсорбционной связи участвует p -состояние углерода, получим: для адсорбции на С-грани 2 …”

Section: о сравнительной роли с-и Si-гранейunclassified

“…Известно, что только в двух политипах SiC положения всех атомов эквивалентны и соответствуют либо кубическим (3C-политип), либо гексагональным (2Н-политип) узлам кристаллической решетки [1,2]. Во всех остальных случаях атомы могут находиться в узлах обоих типов, и политипы различаются количеством атомов в гексагональных ( hex N ) и кубических ( cube N ) позициях.…”

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“…Было убедительно продемонстрировано [1,2], что при гетерополитипной эпитаксии (ГПЭ) примеси, находящиеся в зоне роста, активно влияют на формирование того или иного политипа SiC. Например, до-бавление примесей N, P, H и Ba, а также увеличение отношения Si/C в зоне роста приводят к образованию на подложке 6Н-SiC эпитаксиальных пленок 3С-SiC или пленок других политипов с меньшей, чем у 6Н-SiC, степенью гексагональности.…”

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On the specific features of silicon carbide heteropolytype epitaxy

Davydov¹,

Лебедев²,

Усиков³

2015

Naučno-teh. vestn. inf. tehnol. meh. opt.

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Section: о сравнительной роли с-и Si-гранейunclassified

unclassified

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On the specific features of silicon carbide heteropolytype epitaxy

Davydov¹,

Лебедев²,

Усиков³

2015

Naučno-teh. vestn. inf. tehnol. meh. opt.

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“…[136]. Furthermore, 3C-SiC is expected to give a better SiO 2 /SiC interface in terms of inversion channel mobility [137,138]. In fact, since the bottom of the conduction band in 3C-SiC is about 0.9 eV lower than in 4H-SiC, the near-interface traps located close to the bottom of the conduction band in 4H-SiC, should be inactive in 3C-SiC, leading to higher inversion channel mobility [113,114].…”

Section: Interfaces Considering Different Sic Polytypesmentioning

confidence: 99%

Nanoscale transport properties at silicon carbide interfaces

Roccaforte¹,

Giannazzo²,

Raineri³

2010

J. Phys. D: Appl. Phys.

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Abstract. Wide band gap semiconductors promise devices with performances not achievable using silicon technology. Among them, Silicon Carbide (SiC) is considered the top-notch material for a new generation of power electronic devices, ensuring the improved energy efficiency requested in the modern society. In spite of the significant progresses achieved in the last decade in the material quality, there are still several scientific open issues related to the basic transport properties at SiC interfaces and ion-doped regions that can affect the devices performances, keeping them still far from their theoretical limits. Hence, significant efforts in fundamental research at nanoscale have become mandatory to better understand the carrier transport phenomena, both at surfaces and interfaces. In this paper, the most recent experiences on nanoscale transport properties will be addressed, reviewing the relevant key points for the basic devices building blocks. The selected topics include the major concerns related to the electronic transport in metal/SiC interfaces, to the carrier concentration and mobility in ion-doped regions, and to channel mobility in metal/oxide/SiC systems. Some aspects related to interfaces between different SiC polytypes are also presented. All these issues will be discussed considering the current status and the drawbacks of SiC devices.

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“…Therefore from the point of view of the general prerequisites for epitaxy, 6H-SiC appears to be a perfect substrate for growth of cubic SiC [3][4][5][6].…”

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confidence: 99%

Cubic SiC formation on the C-face of 6H–SiC (0001) substrates

Vasiliauskas¹,

Juillaguet²,

Syväjärvi³

et al. 2012

Journal of Crystal Growth

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Abstract. Nucleation and subsequent growth of cubic SiC (111) on Si-and C-faces of nominally on-axis 6H-SiC substrates was investigated. More uniform nuclei and twin boundary distribution was observed when 3C-SiC was grown on the C-face. This was attributed to a lower critical supersaturation ratio. A new type of defects which appear as pits in the C-face 3C-SiC layers related to homoepitaxial 6H-SiC spiral growth was found and described. The evaluation of the growth driving force for both polar faces showed that the homoepitaxial 6H-SiC spirals were not overgrown on the C-face due to low maximum supersaturation ratio. The XRD ω-rocking characterization shows a better structural quality of the 3C-SiC was grown on the Si-face, however on the C-face the uniformity over the whole sample was higher. Unintentional doping by N (~10 16 cm -3 ) was slightly higher on the C-face while Al doping was higher (~10 14 cm -3 ) on the Si-face of the grown material, similarly to the doping of hexagonal SiC polytypes.

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Heterojunctions and superlattices based on silicon carbide

Cited by 163 publications

References 114 publications

On the specific features of silicon carbide heteropolytype epitaxy

On the specific features of silicon carbide heteropolytype epitaxy

Nanoscale transport properties at silicon carbide interfaces

Cubic SiC formation on the C-face of 6H–SiC (0001) substrates

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