Heterojunction solar cell calculations

Properties of nitride‐based photovoltaic cells under concentrated light illumination

“…Figure 5 shows the measured series resistance ( R S ) and shunt resistance ( R SH ) as functions of the concentration ratio. We calculated R S and R SH from the slope of the I – V curves 8. R S and R SH rapidly decrease with increasing concentration ratio.…”

Some electrical and photovoltaic properties of p-GaAs–n-ZnSe diodes

“…The preliminary results of these studies are presented below. These studies are of significance to the p-GaAs-n-ZnSe heterojunction solar cell which has been analyzed by Sahai and Milnes [ 2 ] and theoretically shown to compare favorably with silicon solar cells. Previous studies [3, 41 of the currentvoltage characteristics of p-GaAs-n-ZnSe heterojunctions have been for heterojunctions prepared from thin films of ZnSe epitaxially grown upon GaAs by HC1 chemical transport processes.…”

“…The response of the ZnSe side of the cell and the GaAs depletion region are negligible since the ZnSe is about 0.5 mm thick and the GaAs depletion region width is negligible for degenerate material. For such a cell with a GaAs thickness of about 10 pm the expression for the total collected current density is [2] Ns(A) is the photon flux density as a functon of wavelength incident on the ZnSe surface. The spectral response predicted by this equation was determined by using published data for the absorption coefficient, &,(A), of GaAs [lo, 111. The transmission coefficient into the ZnSe surface, T = [4 n / ( n + 1)12, was assumed independent of wavelength and .n = 2.55 was used as the index of refraction of ZnSe [12].…”

Minority carrier distribution in the front and base regions of a p/n GaAs-Si heterojunction solar cell and its spectral response

“…These absorbed photons give rise to electron-hole pairs which are separated by the field in the depletion region of the heterojunction giving rise to photocurrent. Sahai and Milnes [3] presented the analysis of such types of solar cells having larger band gap material as the first region. Their studies included the calculation of conversion efficiency of n/p GaP-Si, GaAs-Ge and other such materials.…”