2014
DOI: 10.1016/j.apcatb.2014.03.039
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Heterojunction of facet coupled g-C3N4/surface-fluorinated TiO2 nanosheets for organic pollutants degradation under visible LED light irradiation

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Cited by 321 publications
(98 citation statements)
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“…As a result, many efforts have been devoted to modify synthetic procedures toward g-C 3 N 4 to gain an efficient photocatalytic system, such as doping with metal oxides or nonmetal elements [9][10][11][12][13], construction of porous or hierarchical nanostructures [14][15][16], and combining other semiconductors with suitable band structures [17][18][19][20][21][22]. Among strategies mentioned above, the fabrication of porous g-C 3 N 4 from the precursor of prononated melamine is quite promising and possible to achieve satisfactory catalytic efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…As a result, many efforts have been devoted to modify synthetic procedures toward g-C 3 N 4 to gain an efficient photocatalytic system, such as doping with metal oxides or nonmetal elements [9][10][11][12][13], construction of porous or hierarchical nanostructures [14][15][16], and combining other semiconductors with suitable band structures [17][18][19][20][21][22]. Among strategies mentioned above, the fabrication of porous g-C 3 N 4 from the precursor of prononated melamine is quite promising and possible to achieve satisfactory catalytic efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…10,11 Nevertheless, it has been concluded that the low photocatalytic activities of g-C 3 N 4 are mainly attributed to high recombination of photo-generated charge carriers and low specic surface area. [12][13][14] Many efforts have been made to overcome these bottlenecks. It was reported that ultrasonic vibration, 15 thermal exfoliation 16 and hydrothermal treatment 17 could be used to change the BET surface area.…”
Section: Introductionmentioning
confidence: 99%
“…In an another approach to enhance the efficiency of charge separation in TiO 2 , a heterojunction structure consisting of two different semiconductors has been demonstrated [12]. Once the heterojunction has formed between TiO 2 and the coupled semiconductor material of a suitable band gap, the photoexcited electron of the lower conduction band (CB) potential of TiO 2 will be promoted to the CB potential of the coupled semiconductor material, and similarly, the photoexcited hole of the higher valence band (VB) potential of TiO 2 will be transferred to the VB of the coupled semiconductor material [13].…”
Section: Introductionmentioning
confidence: 99%