Abstract:A GaAlAs/GaAs heterojunction transistor has been made using liquid-phase epitaxy. The emitter stripe was lO/uni wide by 100jum long. The base and emitter had equal impurity content around 5 X 10 23 /m 3 but, with the wide band gap GaALAs emitter, low-frequency current gains approaching 2000 were found. This is amongst the highest so far recorded for this type of transistor. The alpha-cutoff frequency was estimated to be around 1 GHz, but the unity gain frequency was experimentally as low as 100 MHz. This was a… Show more
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