Abstract:In this work we report the application of optical spectroscopic techniques namely photoreflectance (PR), ellipsometry and photoluminescence (PL) for qualification of InGaP/GaAs multi-layer heterojunction bipolar transistor (HBT) material. These techniques reveal important information regarding the quality of the different InGaP and GaAs layers for the emitter, base, collector and surface cap regions. In particular PR studies of non-optimal HBT material reveals InGaP (emitter) layer sub-lattice ordering effects… Show more
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