Heterogenous Integration of InP DHBT and Si CMOS by $30\mu\mathrm{m}$ Pitch Au-In Microbumps

Wu, Lishu; Dai, Jiayun; Wei, Cheng; Kong, Yuechan; Chen, TangShen; Zhang, Tong

doi:10.1109/edtm50988.2021.9420880

Cited by 1 publication

(1 citation statement)

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“…Wire bonding, direct wafer bonding, and microbump (μ-bump) bonding for a heterogeneous integration have been utilized. Although wire bonding is easily accessible to researchers, it causes severe system performance degradation due to significant signal loss in the mmW band or higher, arising from the lengthening of interconnect lines [ 11 ]. Although direct wafer bonding makes it possible to achieve a high chip density in the MIC and transceiver owing to the utilization of a sequential fabrication process after the direct bonding followed by substrate removal, the substrate removal process for leaving active thin-film layers requires a high degree of fabrication proficiency [ 7 , 8 , 9 , 10 , 12 ].…”

Section: Introductionmentioning

confidence: 99%

Implementation of Flip-Chip Microbump Bonding between InP and SiC Substrates for Millimeter-Wave Applications

Lee

Song

et al. 2022

Micromachines

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Flip-chip microbump (μ-bump) bonding technology between indium phosphide (InP) and silicon carbide (SiC) substrates for a millimeter-wave (mmW) wireless communication application is demonstrated. The proposed process of flip-chip μ-bump bonding to achieve high-yield performance utilizes a SiO2-based dielectric passivation process, a sputtering-based pad metallization process, an electroplating (EP) bump process enabling a flat-top μ-bump shape, a dicing process without the peeling of the dielectric layer, and a SnAg-to-Au solder bonding process. By using the bonding process, 10 mm long InP-to-SiC coplanar waveguide (CPW) lines with 10 daisy chains interconnected with a hundred μ-bumps are fabricated. All twelve InP-to-SiC CPW lines placed on two samples, one of which has an area of approximately 11 × 10 mm2, show uniform performance with insertion loss deviation within ±10% along with an average insertion loss of 0.25 dB/mm, while achieving return losses of more than 15 dB at a frequency of 30 GHz, which are comparable to insertion loss values of previously reported conventional CPW lines. In addition, an InP-to-SiC resonant tunneling diode device is fabricated for the first time and its DC and RF characteristics are investigated.

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