Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

Lin, Xiaoyang; Adam, Jean-Paul; Agnus, Guillaume; Wang, Kang; Cai, Wenlong; Coudevylle, Jean-René; Isac, N.; Yang, Jianlei; Yang, Huaiwen; Cao, Kaihua; Cui, Hushan; Zhang, Deming; Zhang, Youguang; Zhao, Chao; Zhao, Weisheng; Ravelosona, D.

doi:10.1002/aelm.201700461

Cited by 14 publications

(7 citation statements)

References 43 publications

(94 reference statements)

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“…The TMR was also a critical factor when we detect skyrmions using an effective electrical method 42,43 . As, the HM/FM/MgO structure we studied is very similar to the configuration of the tunnel barrier layer / free layer / capping layer of the most popular MTJ structure 44 , our study could be therefore very useful to investigate the properties and effects of DMI for the electrical nucleation and detection of magnetic skyrmions through MTJ. Not only Co, but also the influence of MgO on adjacent interfaces could be used to fine-tune the DMI in Pt/Co/MgO samples which is valuable for the induction of chiral magnetic order.…”

Section: Discussionmentioning

confidence: 89%

Tuning the Dzyaloshinskii–Moriya interaction in Pt/Co/MgO heterostructures through the MgO thickness

et al. 2018

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The interfacial Dzyaloshinskii-Moriya interaction (DMI) in ferromagnetic/heavy metal ultra-thin film structures has attracted a lot of attention thanks to its capability to stabilize Néel-type domain walls (DWs) and magnetic skyrmions for the realization of non-volatile memory and logic devices. In this study, we demonstrate that magnetic properties in perpendicularly magnetized Ta/Pt/Co/MgO/Pt heterostructures, such as magnetization and DMI, can be significantly influenced by the MgO thickness. To avoid the excessive oxidation of Co, an ultrathin Mg layer is inserted to improve the quality of the Co-MgO interface. By using field-driven domain wall expansion in the creep regime, we find that non-monotonic tendencies of the DMI field appear when changing the thickness of MgO. With the insertion of a monatomic Mg layer, the strength of the DMI could reach a high level and saturate. We conjecture that the efficient control of the DMI is a result of subtle changes of both Pt/Co and Co/MgO interfaces, which provides a method to optimize the design of ultra-thin structures achieving skyrmion electronics.

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Section: Discussionmentioning

confidence: 89%

Tuning the Dzyaloshinskii–Moriya interaction in Pt/Co/MgO heterostructures through the MgO thickness

et al. 2018

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“…Taking a typical group of spintronic devices as an example, magnetic tunnel junctions have received great interest due to their potential for application in high performance memory devices and various other applications. [7][8][9][10] Magnetic tunnel junctions typically consist of ferromagnetic lms that play pivotal roles in resistive switching. 11 To obtain higher resistive switching ratios and create more responsive magnetic tunnel junctions, extensive work has been done on tuning and fabricating ferromagnetic materials.…”

Section: Introductionmentioning

confidence: 99%

Tuning magnetic anisotropy in Co–BaZrO₃ vertically aligned nanocomposites for memory device integration

et al. 2019

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“…The damaged region is in general of the order of the grain size, which corresponds to a typical length scale of 10-20 nm [34,35].…”

Section: Experiments Methods and Resultsmentioning

confidence: 99%

Domain-Wall Motion Driven by Laplace Pressure in Co−Fe−B/MgO Nanodots with Perpendicular Anisotropy

Zhang

Vernier

et al. 2018

Phys. Rev. Applied

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We have studied the magnetization reversal of CoFeB-MgO nanodots with perpendicular anisotropy for size ranging from w=400 nm to 1 μm. Contrary to previous experiments, the switching field distribution is shifted toward lower magnetic fields as the size of the elements is reduced with a mean switching field varying as 1/w. We show that this mechanism can be explained by the nucleation of a pinned magnetic domain wall (DW) at the edges of the nanodots where damages are introduced by the patterning process. As the surface tension (Laplace pressure) applied on the DW increases when reducing the size of the nanodots, we demonstrate that the depinning field to reverse the entire elements varies as 1/w. These results suggest that the presence of DWs has to be considered in the switching process of nanoscale elements and open a path toward scalable spintronic devices.

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Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

Cited by 14 publications

References 43 publications

Tuning the Dzyaloshinskii–Moriya interaction in Pt/Co/MgO heterostructures through the MgO thickness

Tuning the Dzyaloshinskii–Moriya interaction in Pt/Co/MgO heterostructures through the MgO thickness

Tuning magnetic anisotropy in Co–BaZrO₃ vertically aligned nanocomposites for memory device integration

Domain-Wall Motion Driven by Laplace Pressure in Co−Fe−B/MgO Nanodots with Perpendicular Anisotropy

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Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

Cited by 14 publications

References 43 publications

Tuning the Dzyaloshinskii–Moriya interaction in Pt/Co/MgO heterostructures through the MgO thickness

Tuning the Dzyaloshinskii–Moriya interaction in Pt/Co/MgO heterostructures through the MgO thickness

Tuning magnetic anisotropy in Co–BaZrO3 vertically aligned nanocomposites for memory device integration

Domain-Wall Motion Driven by Laplace Pressure in Co−Fe−B/MgO Nanodots with Perpendicular Anisotropy

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Tuning magnetic anisotropy in Co–BaZrO₃ vertically aligned nanocomposites for memory device integration