Heterogeneous integration of an InAs nanowire with energy-efficient CMOS delta-sigma modulator

Kenji, Michimata; Kotani, Hiroaki; Watanabe, Tatsuro; Funayama, H.; Murakami, Shin; Shimomura, Koichiro; Waho, Takao

doi:10.1109/icsens.2013.6688624

Cited by 2 publications

(2 citation statements)

References 13 publications

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“…Indeed, during the years following Moore’s Law, the silicon fabs have continued to reduce the size of CMOS transistors, reaching dimensions comparable with most of the nanomaterials developed in the last few decades. For this reason the assembling of the sensing material onto the read-out electronics makes them even more interesting, enabling the fabrication of a high-accuracy and low-noise integrated sensing devices [6,7]. At research stage, semiconductor NWs (e.g., Si-NWs) have been already integrated with CMOS technology during the standard fabrication process and experimented as new Field Effect Transistors [8].…”

Section: Introductionmentioning

confidence: 99%

A Multipurpose CMOS Platform for Nanosensing

Bonanno

Sanginario

Miccoli

et al. 2016

Sensors

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This paper presents a customizable sensing system based on functionalized nanowires (NWs) assembled onto complementary metal oxide semiconductor (CMOS) technology. The Micro-for-Nano (M4N) chip integrates on top of the electronics an array of aluminum microelectrodes covered with gold by means of a customized electroless plating process. The NW assembly process is driven by an array of on-chip dielectrophoresis (DEP) generators, enabling a custom layout of different nanosensors on the same microelectrode array. The electrical properties of each assembled NW are singularly sensed through an in situ CMOS read-out circuit (ROC) that guarantees a low noise and reliable measurement. The M4N chip is directly connected to an external microcontroller for configuration and data processing. The processed data are then redirected to a workstation for real-time data visualization and storage during sensing experiments. As proof of concept, ZnO nanowires have been integrated onto the M4N chip to validate the approach that enables different kind of sensing experiments. The device has been then irradiated by an external UV source with adjustable power to measure the ZnO sensitivity to UV-light exposure. A maximum variation of about 80% of the ZnO-NW resistance has been detected by the M4N system when the assembled 5 μm × 500 nm single ZnO-NW is exposed to an estimated incident radiant UV-light flux in the range of 1 nW–229 nW. The performed experiments prove the efficiency of the platform conceived for exploiting any kind of material that can change its capacitance and/or resistance due to an external stimulus.

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Section: Introductionmentioning

confidence: 99%

A Multipurpose CMOS Platform for Nanosensing

Bonanno

Sanginario

Miccoli

et al. 2016

Sensors

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“…Long interconnections and large parasitic at the interface between nanosensor and ROC can introduce a high equivalent coupling noise. For this reason, the integration of nanomaterials on the top of a CMOS silicon chip has been recently proposed [11] as promising solution for low-noise read-out. Existing solutions for NW resistance DC measurement include transimpedance amplifiers or ADCs [12], but they are not suitable for technology scale-down and they cannot easily cover a wide dynamic range with high SNR (≥40 dB).…”

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confidence: 99%

A Low-Power 0.13-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> CMOS IC for ZnO-Nanowire Assembly and Nanowire-Based UV Sensor Interface

et al. 2015

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This paper presents a low-power system conceived for the integration and measurement of a nanowire (NW)-based sensor array onto a 130-nm CMOS technology process. Each array element includes a dielectrophoresis (DEP) signal generator for NWs alignment and a quasi-digital read-out circuit (ROC) for impedance conversion. The two subsystems can be digitally controlled by an external microcontroller which reads the ROC output and calculates the resistance and capacitance of the NW. Measurements show that the integrated two-quadrants quasi-digital ROC covers the range 1 M -1 G and 100 fF-1 μF with a signal-to-noise ratio ≥44.89 dB. The CMOS system can be considered a building block for the implementation of a complete NW-based sensing array and each element, including both DEP and ROC subsystems, occupies an active area of 0.008 mm 2 and only consumes 14.76 μW during read-out phase. The ROC has been also validated using an off-chip nanogapbased nanodevice integrating a single ZnO-NW which has been used as ultraviolet (UV) sensor during experiments. The device has been stimulated by an external UV source providing an irradiance ≥93 μW/cm 2 to the nanodevice surface. We have proved that the ROC is able to measure the ZnO-NW electrical characteristics and their variations due to the photogenerated charge carriers. IndexTerms-Dielectrophoresis, nanowire assembly, nano-on-CMOS, quasi-digital converter, impedance converter, CMOS nanosensor interface, read-out circuit, ROC, micro-for-nano, M4N.

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Heterogeneous integration of an InAs nanowire with energy-efficient CMOS delta-sigma modulator

Cited by 2 publications

References 13 publications

A Multipurpose CMOS Platform for Nanosensing

A Multipurpose CMOS Platform for Nanosensing

A Low-Power 0.13-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> CMOS IC for ZnO-Nanowire Assembly and Nanowire-Based UV Sensor Interface

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