Heterogeneous Integration of a 300mm Silicon Photonics-CMOS Wafer Stack by Direct Oxide Bonding and Via-last 3D Interconnection

McDonough, Colin; Tulipe, Doug La; Pascual, Dan; Tariello, Paul; Mucci, John; Smalley, M.; Nguyen, Anh Tuan; Vo, Tuan; Johnson, Corbet; Nguyen, Phung; Hebding, Jeremiah; Leake, Gerald; Moresco, M.; Timurdogan, Erman; Stojanović, Vladimir; Watts, Michael R.; Coolbaugh, Douglas

doi:10.4071/isom-2015-tha35

Cited by 5 publications

(2 citation statements)

References 12 publications

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“…Recent growth in integrated photonics capabilities enables such an on-chip MLL implementation in principle. Moreover, recently demonstrated wafer-scale electronic-photonic integration enables the possibility of on-chip control loops with nanosecond response time [13,14] which, when designed together with onchip MLLs, could lead to demonstrations of fully-stabilized and fully-on-chip frequency combs and ultra-low-noise microwave oscillators.…”

Section: Introductionmentioning

confidence: 99%

Integrated CMOS-compatible Q-switched mode-locked lasers at 1900nm with an on-chip artificial saturable absorber

Shtyrkova¹,

Callahan²,

Li³

et al. 2019

Opt. Express

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We present a CMOS-compatible, Q-switched mode-locked integrated laser operating at 1.9 µm with a compact footprint of 23.6 × 0.6 × 0.78mm. The Q-switching rate is 720 kHz, the mode-locking rate is 1.2 GHz, and the optical bandwidth is 17nm, which is sufficient to support pulses as short as 215 fs. The laser is fabricated using a silicon nitride on silicon dioxide 300-mm wafer platform, with thulium-doped Al 2 O 3 glass as a gain material deposited over the silicon photonics chip. An integrated Kerr-nonlinearity-based artificial saturable absorber is implemented in silicon nitride. A broadband (over 100 nm) dispersioncompensating grating in silicon nitride provides sufficient anomalous dispersion to compensate for the normal dispersion of the other laser components, enabling femtosecondlevel pulses. The laser has no off-chip components with the exception of the optical pump, allowing for easy co-integration of numerous other photonic devices such as supercontinuum generation and frequency doublers which together potentially enable fully on-chip frequency comb generation.

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Section: Introductionmentioning

confidence: 99%

Integrated CMOS-compatible Q-switched mode-locked lasers at 1900nm with an on-chip artificial saturable absorber

Shtyrkova¹,

Callahan²,

Li³

et al. 2019

Opt. Express

Self Cite

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“…Such an integration scheme is a potential solution for controlling a large number of microring devices. Heterogeneous implementation of driver electronics with photonics has been explored at great length, and is a promising solution for application-specific control of photonic elements within the same substrate 44 . Such a solution localizes the optical interconnect and its control to a single substrate, and has the potential for multi-layer photonic-electronic integration.…”

Section: Impact Of Active Switchingmentioning

confidence: 99%

Modular architecture for fully non-blocking silicon photonic switch fabric

Nikolova¹,

Calhoun²,

Liu³

et al. 2017

Microsyst Nanoeng

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Integrated photonics offers the possibility of compact, low energy, bandwidth-dense interconnects for large port count spatial optical switches, facilitating flexible and energy efficient data movement in future data communications systems. To achieve widespread adoption, intimate integration with electronics has to be possible, requiring switch design using standard microelectronic foundry processes and available devices. We report on the feasibility of a switch fabric comprised of ubiquitous silicon photonic building blocks, opening the possibility to combine technologies, and materials towards a new path for switch fabric design. Rather than focus on integrating all devices on a single silicon chip die to achieve large port count optical switching, this work shifts the focus towards innovative packaging and integration schemes. In this work, we demonstrate 1 × 8 and 8 × 1 microring-based silicon photonic switch building blocks with software control, providing the feasibility of a full 8 × 8 architecture composed of silicon photonic building blocks. The proposed switch is fully non-blocking, has path-independent insertion loss, low crosstalk, and is straightforward to control. We further analyze this architecture and compare it with other common switching architectures for varying underlying technologies and radices, showing that the proposed architecture favorably scales to very large port counts when considering both crosstalk and architectural footprint. Separating a switch fabric into functional building blocks via multiple photonic integrated circuits offers the advantage of piece-wise manufacturing, packaging, and assembly, potentially reducing the number of optical I/O and electrical contacts on a single die.

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A Review of Electronic-Photonic Heterogeneous Integration at DARPA

Heidel

Usechak

Dohrman

et al. 2016

IEEE J. Select. Topics Quantum Electron.

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The Defense Advanced Research Projects Agency (DARPA) has developed programs in integrated photonics for over a decade. From the Electronic-Photonic Integrated Circuits (EPIC) program to the more recent Electronic-Photonic Heterogeneous Integration (E-PHI) program, DARPA programs have established a library of high performance silicon photonic devices and have demonstrated heterogeneous integration processes. These components and integration techniques, combined with automated design software tools, form the basis of the new American Institute for Manufacturing Integrated Photonics (AIM Photonics) which will establish a photonics manufacturing ecosystem in the United States through a combination of public and private funds. Index Terms-integrated photonics, heterogeneous integration, 1077-260X (c)

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Heterogeneous Integration of a 300mm Silicon Photonics-CMOS Wafer Stack by Direct Oxide Bonding and Via-last 3D Interconnection

Cited by 5 publications

References 12 publications

Integrated CMOS-compatible Q-switched mode-locked lasers at 1900nm with an on-chip artificial saturable absorber

Integrated CMOS-compatible Q-switched mode-locked lasers at 1900nm with an on-chip artificial saturable absorber

Modular architecture for fully non-blocking silicon photonic switch fabric

A Review of Electronic-Photonic Heterogeneous Integration at DARPA

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