2016
DOI: 10.4071/imaps.494
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Heterogeneous Integration of a 300-mm Silicon Photonics-CMOS Wafer Stack by Direct Oxide Bonding and Via-Last 3-D Interconnection

Abstract: A fully functional Si photonics and 65-nm complementary metal-oxide semiconductor (CMOS) heterogeneous three-dimensional (3-D) integration is demonstrated for the first time in a 300-mm production environment. Direct oxide wafer bonding was developed to eliminate voids between silicon on insulator photonics and bulk Si CMOS wafers. A via-last, Cu through-oxide via 3-D integration was developed for low capacitance electrical connections with no impact on the CMOS performance. The 3-D yield approaching 100% was … Show more

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Cited by 4 publications
(2 citation statements)
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“…A demonstration of the TOV technology enabled on-chip photonic transmit and receive modules which were used in a 5 Gb/s link consuming 250 fJ/bit, including the onchip optical power [31]. The yield of the TOV process is nearly 100% [32].…”
Section: B Electronic-photonic Integrationmentioning
confidence: 99%
“…A demonstration of the TOV technology enabled on-chip photonic transmit and receive modules which were used in a 5 Gb/s link consuming 250 fJ/bit, including the onchip optical power [31]. The yield of the TOV process is nearly 100% [32].…”
Section: B Electronic-photonic Integrationmentioning
confidence: 99%
“…The beam-steering optical phased array heterogeneously integrated with CMOS driving electronics and the single-chip coherent LiDAR with integrated optical phased arrays and CMOS receiver electronics were both fabricated at SUNY Poly in a novel 3D-integrated electronics-photonics platform [69], as shown in Fig. 2.9a.…”
Section: Platformmentioning
confidence: 99%