Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs

Abstract

For next-generation system-on-chips (SoCs) in diverse applications (RF, sensor, display, etc.) which require high-performance, small form factors, and low power consumption, heterogeneous and monolithic 3D (M3D) integration employing advanced Si CMOS technology has been intriguing. To realize the M3D-based systems, it is important to take into account the relationship between the top and bottom devices in terms of thermal budget, electrical coupling, and operability when using different materials and various processes during integration and sequential fabrication. In this paper, from this perspective, we present our recent progress of III-V devices on Si bottom devices/circuits for providing informative guidelines in RF and imaging devices. Successful fabrication of the high-performance InGaAs high electron mobility transistors (HEMTs) on the bottom ICs, with a high unity current gain cutoff frequency (fT) and unity power gain cutoff frequency (fMAX) was accomplished without substrate noise. Furthermore, the insertion of an intermediate metal plate between the top and bottom devices reduced the thermal interaction. Furthermore, the InGaAs photodetectors (PDs) were monolithically integrated on Si bottom devices without thermal damage due to low process temperature. Based on the integrated devices, we successfully evaluated the device scalability using sequential fabrication and basic readout functions of integrated circuits.

Low-dimensional nanostructures for monolithic 3D-integrated flexible and stretchable electronics

“…Currently, silicon-based 3D integrated electronic systems are commercially available. 44,45 In addition, low-dimensional nanostructures ( e.g. , nanowires, nanorods, and nanosheets) offer several notable benefits at nanoscale dimensions ( e.g.…”

“…Currently, silicon-based 3D integrated electronic systems are commercially available. 44,45 In addition, low-dimensional nanostructures (e.g., nanowires, nanorods, and nanosheets) offer several notable benefits at nanoscale dimensions (e.g., a high surface-to-volume ratio, quantum confinement effects, and tunable properties), and they could serve as means to overcome the limitations of traditional planar device architectures and enable the integration of diverse materials and functionalities in monolithic 3D (M3D) devices or systems. Leveraging the unique properties, vertical growth direction, and tunability of low-dimensional nanostructures makes them indispensable for advancing 3D device integration and unlocking new possibilities in electronics, 40,46 optoelectronics, 2,47 energy storage, 48 and beyond.…”

Microsupercapacitors Working at 250 °C

“…For example, the fabrication of ceramic electrolytes requires high-temperature (> 600 °C) processing, [19] while many on-chip electronic devices can only sustain temperature up to 400 °C. [23] Moreover, their need for high-pressure pressing could also be problematic for many electronic chips. Meanwhile, the "structural stability" of the entire electrolyte under high temperature could also influence the operating temperature limit of the MSCs.…”

“…However, the extra challenge for fabricating high‐temperature MSCs primarily arises from the incompatibility of most present high‐temperature electrolyte fabrication with on‐chip integration. For example, the fabrication of ceramic electrolytes requires high‐temperature (>600 °C) processing, [19] while many on‐chip electronic devices can only sustain temperature up to 400 °C [23] . Moreover, their need for high‐pressure pressing could also be problematic for many electronic chips.…”

Multifunctional Magnetic Oxide‐MoS2 Heterostructures on Silicon

“…[ 1 ] Monolithic integration of non‐digital functions, including sensors, amplifiers, and actuators, with the Si platform has been explored as an alternative approach and shown great potential for future information‐processing technologies. [ 2 ] This approach apparently requires heterogeneous integration of materials with appealing electronic, optical, magnetic, and mechanical properties on the Si platform without damaging the Si electronics. 2D layered materials (2DLMs) such as graphene and transition metal dichalcogenides (TMDCs), which have outstanding electronic and optical properties, [ 3 ] can be transferred from original growth substrates onto other platforms at low temperatures because they bond via weak van der Waals forces.…”